SS9015ABU

©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002

SS9015

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings T

a

=25°C unless otherwise noted

Electrical Characteristics T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage -50 V

V

CEO

Collector-Emitter Voltage -45 V

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current -100 mA

P

C

Collector Power Dissipation 450 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= -100µA, I

E

=0 -50 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= -1mA, I

B

=0 -45 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= -100µA, I

C

=0 -5 V

I

CBO

Collector Cut-off Current V

CB

= -50V, I

E

=0 -50 nA

I

EBO

Emitter Cut-off Current V

EB

= -5V, I

C

=0 -50 nA

h

FE

DC Current Gain V

CE

= -5V, I

C

= -1mA 60 1000

V

CE

(sat) Collector-Base Saturation Voltage I

C

= -100mA, I

B

= -5mA -0.7

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= -100mA, I

B

= -5mA -1.0 V

V

BE

(on) Base-Emitter On Voltage V

CE

= -5V, I

C

= -2mA -0.6 -0.75 V

C

ob

Output Capacitance V

CB

= -10V, I

E

=0

f=1MHz

4.5 7.0 pF

f

T

Current Gain Bandwidth Product V

CE

= -5V, I

C

= -10mA 100 190 MHz

NF Noise Figure V

CE

= -5V, I

C

= -0.2mA

f=1KHz, R

S

=1KΩ

0.7 10 dB

Classification A B C D

h

FE

60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000

1. Emitter 2. Base 3. Collector

SS9015

Low Frequency, Low Noise Amplifier

• Complement to SS9014

TO-92

1

©2002 Fairchild Semiconductor Corporation

SS9015

Rev. B2, November 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Current Gian Bandwidth Product

-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20

-0

-10

-20

-30

-40

-50

I

B

= -400µA

I

B

= -350µA

I

B

= -300µA

I

B

= -250µA

I

B

= -200µA

I

B

= -150µA

I

B

= -100µA

I

B

= -50µA

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -100 -1000

-10

-100

-1000

V

CE

= -5V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

-0.1 -1 -10 -100

-10

-100

-1000

I

C

= 20 I

B

V

BE

(sat)

V

CE

(sat)

V

BE

(sat), V

CE

(sat)[mV], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-0.1

-1

-10

-100

V

CE

= -5V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

-1 -10 -100

1

10

f = 1 MHz

I

E

= 0

C

ob

[pF], OUTPUT CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

-1 -10

10

100

1000

V

CE

= -6V

f

T

[MHz], CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

0.46

±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±0.20

]

1.27TYP

[1.27

±0.20

]

3.60

±0.20

14.47

±0.40

1.02

±0.10

(0.25)

4.58

±0.20

4.58

+0.25

–0.15

0.38

+0.10

–0.05

0.38

+0.10

–0.05

TO-92

Package Dimensions

SS9015

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002

SS9015ABU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT PNP/50V/100MA

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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