Product Standards
MOS FET
MTM232230LBF
Electrical Characteristics Ta = 25 C 3 C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1
Pulse test : Pulse width < 300 s、Duty cycle < 2 %
*2 Turn-on and Turn-off test circuit
Page 2 of 6
最小 標準 最大 単位項目 記号 条件
10 VGS =
8 V, VDS = 0 V
Drain-source surrender voltage VDSS 20
Drain-source cutoff current IDSS
Gate-source cutoff current IGSS
20 28
Gate threshold voltage Vth 0.4
RDS(ON)2
26 40
ID = 1 A, VDS = 10 V, f = 1 kHz
Forward transfer admittance
*1
|Yfs| 3.5
Reverse transfer capacitance (Common source)
Crss
Short-circuit input capacitance (Common source)
Ciss
Turn-off Time
*2
80
1 200
Short-circuit output capacitance (Common source)
Coss 85
ID = 1 mA, VGS = 0 V V
VDS = 20 V, VGS = 0 V
A
1.0
A
ID = 1.0 mA, VDS = 10.0 V V
Drain-source ON resistance
*1
ID = 1 A, VGS = 4 V
m
ID = 0.6 A, VGS = 2.5 V
0.85 1.3
RDS(ON)1
S
Turn-on Time
*2
ton
VDD = 10 V, VGS = 0 to 4 V
ID = 1 A
16 ns
pF VDS = 10 V, VGS = 0, f = 1 MHz
nstoff
VDD = 10 V, VGS = 4 to 0 V
ID = 1 A
220
