CUS06(TE85L,Q,M)

CUS06
2013-11-01
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS06
Switching Mode Power Supply Applications
Portable Equipment Battery Application
Forward voltage: V
FM
= 0.45 V (max) @I
F
= 0.7 A
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 20 V
Suitable for high-density board assembly due to the use of a small
Surface-mount package, USFLAT
TM
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
20 V
Average forward current I
F (AV)
1.0 (Note 1)
A
Peak one cycle surge forward current
(Non-repetitive)
I
FSM
20 (50 Hz) A
Junction temperature T
j
40 to 150 °C
Storage temperature range T
stg
40 to 150 °C
Note 1: Ta = 66°C: Device mounted on a glass-epoxy board
(Board size: 50 mm × 50 mm,
Soldering land: 6 mm × 6 mm)
Rectangular waveform (α = 180°), V
R
= 10 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
ANODE
CATHODE
0.13
1.9 ± 0.1
2.5 ± 0.2
0 ~ 0.05
0.5 ± 0.1
0.6
±
0.1
+ 0.2
0.1
1.25
0.88 ± 0.1
0.6 ± 0.1
0.6
±
0.1
0.6
±
0.1
1.4 ± 0.2
0.88
±
0.1
0.78
±
0.1
+
0.05
0.03
JEDEC
JEITA
TOSHIBA 3-2B1A
Weight: 0.004 g (typ.)
Start of commercial production
2007-02
CUS06
2013-11-01
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Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
V
FM (1)
I
FM
= 0.1 A 0.35
V
FM (2)
I
FM
= 0.7 A 0.42 0.45
Peak forward voltage
V
FM (3)
I
FM
= 1.0 A 0.47
V
I
RRM (1)
V
RRM
= 5 V 0.7 μA
Repetitive peak reverse current
I
RRM (2)
V
RRM
= 20 V 3.0 30 μA
Junction capacitance C
j
V
R
= 10 V, f = 1.0 MHz 40 pF
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 mm)
75
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 mm)
150
°C/W
Thermal resistance (junction to lead) R
th (j-)
Junction to lead of cathode side 30 °C/W
Marking
Abbreviation Code Part No.
6 CUS06
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
This device is V
F
-I
RRM
trade-off type, lower V
F
higher I
RRM
; therefore, thermal runaway might occur when
voltage is applied. Please take forward and reverse loss into consideration during the design.
The absolute maximum ratings are rated values and must not be exceeded during operation, even for an instant.
The following are the general derating methods that we recommend for designing a circuit using this device.
V
RRM
: Use this rating with reference to the above. V
RRM
has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
I
F(AV)
: We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of I
F(AV)
and T
j
be below 120°C. When using this device, take the margin into consideration by
using an allowable Tamax-I
F(AV)
curve.
I
FSM
: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
T
j
: Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at T
j
of below 120°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance
value.
Refer to the Rectifiers databook for further information.
Unit: mm
2.0
1.1
0.5
0.8
0.8
CUS06
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0
0
160
0.2 0.4 0.6 1.0 1.2
60
20
40
80
100
0.8 1.4 1.6
120
DCα = 60°
140
120° 180°
160
0
0 0.2 0.4 0.6 1.0 1.2
80
20
40
100
120
0.8 1.4 1.6
140
180° 120° DC
α = 60°
60
0
0
160
0.2 0.4 0.6 1.0 1.2
60
20
40
80
100
0.8 1.4 1.6
120
DCα = 60°
140
120° 180°
0.6
0
0
0.2 0.4 0.6 1.0 1.2 0.8 1.4 1.6
0.3
0.1
0.2
0.4
180°
120°
DC
α = 60°
0.5
0.01
0
75°C
25°C
T
j
= 150°C
10
1
0.1
0.2 0.4 0.6 0.8 1.0
100°C
Maximum allowable lead temperature
T
max (°C)
Instantaneous forward voltage v
F
(V)
i
F
– v
F
Instantaneous forward current i
F
(A)
Average forward current I
F (AV)
(A)
P
F (AV)
– I
F (AV)
Average forward power dissipation
P
F (AV)
(W)
Average forward current I
F (AV)
(A)
Ta ma x I
F (AV)
Maximum allowable ambient temperature
Ta max ( ° C )
Average forward current I
F (AV)
(A)
T
max – I
F (AV)
Rectangular
waveform
α 0° 360°
Conduction
angle: α
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
Rectangular waveform
Conduction angle:
α
V
R
= 10 V
I
F
AV
α 0° 360°
Rectangular
waveform
α 0° 360°
Conduction
angle:
α
V
R
= 10 V
I
F
AV
Number of cycles
Surge forward current (non-repetitive)
Peak surge forward current I
FSM
(A)
Average forward current I
F (AV)
(A)
Ta ma x I
F (AV)
Maximum allowable ambient temperature
Ta m ax ( ° C )
Device mounted on a glass-epox
y
board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
Rectangular waveform
α 360°
Conduction
angle:
α
V
R
= 10 V
I
F
(
AV
)
0
1
Ta = 2 5 ° C
f = 50 Hz
24
10 100
20
16
12
8
4

CUS06(TE85L,Q,M)

Mfr. #:
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers 20V Vrrm .07A IF 20A 0.45V VFM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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