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MMBT4401-13-F

P1-P3P4-P6P7-P7
MMBT4401
Document Number: DS30039 Rev. 17 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
Electrical Characteristics (@T
A
= +25°C unless otherwise specified)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
60
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage(Note 10)
BV
CEO
40
V
I
C
= 10.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6.0
V
I
E
= 100μA, I
C
= 0
Collector Cutoff Current
I
CEX
100 nA
V
CE
= 35V, V
EB
(
OFF
)
= 0.4V
Base Cutoff Current
I
BL
100 nA
V
CE
= 35V, V
EB
(
OFF
)
= 0.4V
ON CHARACTERISTICS (Note 10)
DC Current Gain
h
FE
20
40
80
100
40
300
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
Collector-Emitter Saturation Voltage
V
CE(sat)
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(sat)
0.75
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
6.5 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
30 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0 15 kΩ
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1 8.0 x 10
-4
Small Signal Current Gain
h
fe
40 500
Output Admittance
h
oe
1.0 30 μS
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
15 ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA Rise Time
t
r
20 ns
Storage Time
t
s
225 ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= -I
B2
= 15mA Fall Time
t
f
30 ns
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT4401
Document Number: DS30039 Rev. 17 - 2
5 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
1
10
1,000
100
0.1
1
10
1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
110
100
1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 2 Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1 10 100
V , BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
5
20
30
10
0.1
101.0
50
C
A
P
A
C
I
T
A
N
C
E (p
F
)
V , REVERSE VOLTAGE (V)
Figure 4 Typical Capacitance Characteristics
R
C
obo
100
C
ibo
1
10
100
1,000
110100
I , COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product vs. Collector Current
C
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
0.001 0.01
1
10
0.1
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
MMBT4401
Document Number: DS30039 Rev. 17 - 2
6 of 7
www.diodes.com
November 2013
© Diodes Incorporated
MMBT4401
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
X
E
Y
C
Z
P1-P3P4-P6P7-P7

MMBT4401-13-F

Mfr. #:
Buy MMBT4401-13-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN
Lifecycle:
New from this manufacturer.
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