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PSMN063-150D,118

P1-P3P4-P6P7-P9P10-P12P13-P13
PSMN063-150D_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 17 December 2009 3 of 12
NXP Semiconductors
PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
T
mb
(°C)
0 20015050 100
03aa24
40
80
120
I
der
(%)
0
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
DC
11010
2
10
3
V
DS
(V)
I
D
(A)
10
−1
1
10
10
2
10
3
R
DSon
= V
DS
/ I
D
t
p
= 10 μs
100 μs
1 ms
10 ms
100 ms
003aaa148
PSMN063-150D_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 17 December 2009 4 of 12
NXP Semiconductors
PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
see Figure 4 --1K/W
R
th(j-a)
thermal resistance from junction to
ambient
vertical in still air - 50 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
δ =
0.5
0.2
0.1
0.05
0.02
single pulse
10
1
10
−1
10
−2
10
−3
Z
th(j-mb)
(K/W)
110
−1
10
−2
10
−3
10
−4
10
−5
10
−6
t
p
(s)
003aaa149
t
p
t
p
T
P
t
T
δ =
PSMN063-150D_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 17 December 2009 5 of 12
NXP Semiconductors
PSMN063-150D
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=-55°C 133 - - V
I
D
=250µA; V
GS
=0V; T
j
=25°C 150 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
= 175 °C; see Figure 9 1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
= -55 °C; see Figure 9 --6V
I
D
=1mA; V
DS
= V
GS
; T
j
= 25 °C; see Figure 9 234V
I
DSS
drain leakage current V
DS
=150V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
V
DS
=150V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=10V; V
DS
=0V; T
j
= 25 °C - 0.02 100 nA
V
GS
=-10V; V
DS
=0V; T
j
= 25 °C - 0.02 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A; T
j
= 175 °C;
see Figure 10 and 11
--176mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 10
and 11
-6063mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=30A; V
DS
=120V; V
GS
=10V; T
j
=25°C;
see Figure 12
-55-nC
Q
GS
gate-source charge I
D
=30A; V
DS
=120V; V
GS
= 120 V;
T
j
=25°C; see Figure 12
-10-nC
Q
GD
gate-drain charge I
D
=30A; V
DS
=120V; V
GS
=10V; T
j
=25°C;
see Figure 12
-2027nC
C
iss
input capacitance V
DS
=25V; V
GS
= 0 V; f = 1 MHz; T
j
=25°C;
see Figure 13
- 2390 - pF
C
oss
output capacitance - 240 - pF
C
rss
reverse transfer
capacitance
-98-pF
t
d(on)
turn-on delay time V
DS
=75V; R
L
=2.7Ω; V
GS
=10V;
R
G(ext)
=5.6Ω; T
j
=25°C
-14-ns
t
r
rise time - 50 - ns
t
d(off)
turn-off delay time - 48 - ns
t
f
fall time - 38 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
= 25 °C; see Figure 14 -0.91.2V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V; T
j
=25°C
- 105 - ns
Q
r
recovered charge - 0.55 - µC
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PSMN063-150D,118

Mfr. #:
Buy PSMN063-150D,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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