V8PM10
www.vishay.com
Vishay General Semiconductor
Revision: 03-Jul-15
1
Document Number: 87620
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High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.50 V at I
F
= 4 A
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended pad area
PRIMARY CHARACTERISTICS
I
F(AV)
8 A
V
RRM
100 V
I
FSM
140 A
V
F
at I
F
= 8 A (125 °C) 0.60 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variations Single die
K
2
1
TO-277A (SMPC)
TMBS
®
eSMP
®
Series
Anode 1
Anode 2
Cathode
K
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V8PM10 UNIT
Device marking code 8M10
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum DC forward current
I
F(AV)
(1)
8
A
I
F(AV)
(2)
3.2
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
140 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C