NSD16F3T5G Datasheet NSD16F3T5G | P1-P3

May, 2014 − Rev. 1

1 Publication Order Number:

NSD16F3/D

NSD16F3T5G

Switching Diode

The NSD16F3T5G device is a spin−off of our popular SOT−23

three−leaded device. It is designed for switching applications and is

housed in the SOT−1123 surface mount package. This device is ideal

for low−power surface mount applications where board space is at a

premium.

Features

• Reduces Board Space

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage V

75 Vdc

Forward Current I

200 mAdc

Peak Forward Surge Current I

FM(surge)

500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation, T

= 25°C

Derate above 25°C

(Note 1)

290

2.3

mW/°C

Thermal Resistance,

Junction−to−Ambient

(Note 1)

432 °C/W

Total Device Dissipation, T

= 25°C

Derate above 25°C

(Note 2)

347

2.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

(Note 2)

360 °C/W

Thermal Resistance,

Junction−to−Lead 3

(Note 2)

143 °C/W

Junction and Storage Temperature Range T

, T

stg

−55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. 100 mm

1 oz, copper traces.

2. 500 mm

1 oz, copper traces.

SOT−1123

CASE 524AA

STYLE 2

NSD16F3T5G

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

Device Package Shipping

†

NSD16F3T5G SOT−1123

(Pb−Free)

8000/Tape & Ree

T = Device Code

M = Date Code

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

T M

ANODE

CATHODE

NSD16F3T5G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

= 100 Vdc)

= 75 Vdc, T

= 150°C)

= 25 Vdc, T

= 150°C)

−

1.0

mAdc

Reverse Breakdown Voltage

= 100 mAdc)

(BR)

75 − Vdc

Forward Voltage

= 1.0 mAdc)

= 10 mAdc)

= 50 mAdc)

= 150 mAdc)

−

715

855

1000

1250

Diode Capacitance

= 0, f = 1.0 MHz)

− 2.0 pF

Forward Recovery Voltage

= 10 mAdc, t

= 20 ns)

− 1.75 Vdc

Reverse Recovery Time

= I

= 10 mAdc, R

= 50 W)

− 6.0 ns

Stored Charge

= 10 mAdc to V

= 5.0 Vdc, R

= 500 W)

− 45 pC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I

) of 10 mA.

Notes: 2. Input pulse is adjusted so I

R(peak)

is equal to 10 mA.

Notes: 3. t

» t

+10 V

2.0 k

820 W

0.1 mF

D.U.T.

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

R(REC)

= 1.0 mA

OUTPUT PULSE

= I

= 10 mA; MEASURED

at i

R(REC)

= 1.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

NSD16F3T5G

http://onsemi.com

TYPICAL CHARACTERISTICS

0.1

, FORWARD VOLTAGE (V)

0.01

, REVERSE VOLTAGE (V)

1.0

0.1

0.01

0.001

10 20 30 40

0.62

, REVERSE VOLTAGE (V)

0.60

0.56

0.50

0.48

, DIODE CAPACITANCE (pF)

246 8

, FORWARD CURRENT (mA)

Figure 2. V

vs. I

Figure 3. I

vs. V

Figure 4. Capacitance

, REVERSE CURRENT (μA)

0.1

1.0

100

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

85°C

55°C

150°C

125°C

25°C

-40°C

-55°C

60 70

-40°C

150°C

125°C

85°C

55°C

25°C

0.52

0.54

0.58

1357

85°C

Cap

P1-P3 P4-P4

NSD16F3T5G

Mfr. #:

Buy NSD16F3T5G

Manufacturer:

ON Semiconductor

Description:

Diodes - General Purpose, Power, Switching SS SWITCHING DIODE

Lifecycle:

New from this manufacturer.

Delivery:

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NSD16F3T5G