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IRL3715STRR
P1-P3
P4-P6
P7-P9
P10-P12
IRL3715/S/L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
1
10
100
V
DS
, Drain-toSource Voltage (V)
1
10
100
1000
I
D
, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
0.1
1
10
100
0.2
0.7
1.2
1.7
2.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
0
5
10
15
20
25
0
2
4
6
8
10
12
14
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I
=
D
13
21A
V
=
10V
DS
V
=
16V
DS
IRL3715/S/L
www.irf.com
5
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T
=
P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
IRL3715/S/L
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
4.5 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(
BR)
DS
S
I
AS
25
50
75
100
125
150
175
0
40
80
120
160
200
240
Starting T , Junction Temperature
( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
8.5A
15A
21A
R
G
I
AS
0.01
Ω
t
p
D.
U
.
T
L
V
DS
+
-
V
DD
DR
I
VER
A
15
V
20V
V
GS
P1-P3
P4-P6
P7-P9
P10-P12
IRL3715STRR
Mfr. #:
Buy IRL3715STRR
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 54A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
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