RJP60F4DPM Preliminary
R07DS0586EJ0100 Rev.1.00 Page 4 of 6
Nov 25, 2011
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
600
400
200
0
0
16
12
8
4
0
20 40 60 80 100
I
C
= 30 A
V
GE
V
CE
V
CE
= 600 V
300 V
V
CE
= 600 V
300 V
Capacitance C (pF)
1
10
100
1000
10000
0 50150100 200 250 300
Typical Capacitance vs.
Colloctor to Emitter Voltage
Colloctor to Emitter Voltage V
CE
(V)
Cies
Coes
Cres
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0 5025 15075 1251000 5025 15075 125100
800
400
1600
1200
0
120
80
40
240
200
160
0
Switching Characteristics (Typical) (3)
100
1000
10
t
d(off)
t
d(on)
t
f
t
r
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
Switching Characteristics (Typical) (4)
Eoff
Eon
Swithing Energy Losses E (μJ)
Switching Times t (ns)
1 10 200100
10
1000
100
100000
10000
Swithing Energy Losses E (μJ)
1 10 100
Collector Current I
C
(A)
(Inductive load)
Eoff
Eon
Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)
Collector Current I
C
(A)
(Inductive load)
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
Rg = 5 Ω, Tj = 150
°
C
t
r
includes the diode recovery
V
CC
= 400 V, V
GE
= 15 V
Rg = 5 Ω, Tj = 150
°
C
Eon includes the diode recovery
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω
Eon includes the diode recovery
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω
t
r
includes the diode recovery
t
d(off)
t
d(on)
t
f
t
r
