RJP6085DPN-00#T2

RJP6085DPN
REJ03G1863-0100 Rev.1.00 Nov 09, 2009
Page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
— 10 μA V
CE
= 600V, V
GE
= 0 V
Gate to emitter leak current I
GES
±1 μA V
GE
= ±30 V, V
CE
= 0 V
Gate to emitter cutoff voltage V
GE(off)
4 6 V V
CE
= 10V, I
C
= 1 mA
Collector to emitter saturation voltage V
CE(sat)
2.65 3.5 V I
C
= 40 A, V
GE
= 15V
Note3
Input capacitance Cies 1150 pF
Output capacitance Coes — 105 — pF
Reveres transfer capacitance Cres 12 pF
V
CE
= 25V
V
GE
= 0 V
f = 1MHz
t
d(on)
— 30 — ns
t
r
— 60 — ns
t
d(off)
— 60 — ns
Switching time
t
f
— 40 — ns
I
C
= 40 A, Resistive Load
V
CC
= 300V
V
GE
= 15V
Rg = 5 Ω
Notes: 3. Pulse test
RJP6085DPN
REJ03G1863-0100 Rev.1.00 Nov 09, 2009
Page 3 of 5
Main Characteristics
Typical Output Characteristics (2)
Typical Transfer Characteristics
100
80
60
40
20
2468
10
Typical Output Characteristics (1)
50
40
30
20
10
2468
10
Pulse Test
Ta = 25
°
C
Pulse Test
Ta = 25
°
C
6.6 V
6.8 V
7 V
7.2 V
7.4 V
7.6 V
7.8 V
8 V
8.2 V
8.4 V
9.5 V
10 V
10.5 V
9 V
10 V
15 V
Collector Current I
C
(A)Collector Current I
C
(A)
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector Current I
C
(A)
Maximum Safe Operation Area
0
10
20
30
40
0
0
0
0
0
246810
0
2
1
3
5
4
6
0 4 8 12 20
16
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
20 A 40 A
0.1
1
10
1 10 100
25°C
–25°C
Tc = 75°C
I
C
= 10 A
V
GE
= 6.4 V
7 V
7.5 V
8 V
8.5 V
9 V
V
GE
= 6.5 V
Pulse Test
Ta = 25
°
C
V
GE
= 15 V
Pulse Test
V
CE
= 10 V
Pulse Test
Collector to Emitter Voltage V
CE
(V) Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
25°C
–25°C
Tc = 75°C
11 V
12 V
13 V
15 V
1000
100
10
0.1 1 10 100
1
0.01
0.1
1000
10 μs
PW = 100 μs
Tc = 25
°
C
1 shot pulse
RJP6085DPN
REJ03G1863-0100 Rev.1.00 Nov 09, 2009
Page 4 of 5
0.01
0.1
1
10050 150
10
100
1000
Capacitance C (pF)
1
10
100
1000
10000
0 50 100 150 200 250
Cies1
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
81624 32 40
I
C
= 40 A
V
GE
V
CE
V
GE
= 300 V
100 V
V
CE
= 300 V
100 V
Switching Characteristics (Typical) (1)
1 10 100
1 10 100
Switching Characteristics (Typical) (2)
10
100
1000
Switching Characteristics (Typical) (3)
10
100
1000
0
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Ta = 25
°
C
I
C
= 40 A, R
L
= 7.5 Ω
V
GE
= 15 V, Ta = 25
°
C
I
C
= 40 A, R
L
= 7.5 Ω
V
GE
= 15 V, Ta = 25
°
C
t
d(off)
t
d(on)
t
f
t
r
t
d(off)
t
d(on)
t
f
t
r
t
d(off)
t
d(on)
t
f
t
r
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A) Gate Resistance Rg (Ω)
Switching Time t (ns)Switching Time t (ns)
Switching Time t (ns)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Case Temperature Tc (°C)
0.0001 1010.10.010.001
Thermal impedance θj-c (°C/W)
Pulse Width PW (s)
Tc = 25°C
Single pulse
Transient Thermal Impedance vs. Pulse Width

RJP6085DPN-00#T2

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors Power Module - Lead Free
Lifecycle:
New from this manufacturer.
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