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CNX83A300W

P1-P3P4-P5
6
1
FEATURES
• Input/Output pin distance 10.16 mm
• UL recognized (File # E90700)
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W,
consist of a gallium arsenide infrared emitting diode driving a
silicon phototransistor in a 6-pin dual in-line package.
2
1
3NC
5
6NC
SCHEMATIC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
CNX82A.W
SL5582.W
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
CNX83A.W
SL5583.W
4
2
1
3NC
5
6
4
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
PACKAGE DIMENSIONS
SEATING PLANE
0.016 (0.40)
0.008 (0.20)
0.070 (1.78)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.154 (3.90)
0.100 (2.54)
0.200 (5.08)
0.115 (2.92)
0.004 (0.10)
MIN
0.270 (6.86)
0.240 (6.10)
0.400 (10.16)
TYP
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
NOTE
All dimensions are in inches (millimeters)
4/13/00 200024D
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Junction Temperature T
J
125 °C
Total Device Power Dissipation @ T
A
= 25°CP
D
250 mW
EMITTER
I
F
100 mA
DC/Average Forward Input Current
Reverse Input Voltage V
R
5.0 V
Forward Current - Peak (1µs pulse, 300pps) I
F
(pk) 3.0 A
LED Power Dissipation @ T
A
= 25°C
P
D
140 mW
Derate above 25°C 1.33 mW/°C
DETECTOR
V
CEO
50 V
Collector-Emitter Voltage
Collector-Base Voltage (CNX83A) V
CBO
70 V
Emitter-Collector Voltage V
ECO
7V
Continuous Collector Current I
C
100 mA
Detector Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
Unless otherwise specified.)
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
4/13/00 200024D
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7352417
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
Parameter Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
(I
F
= 10 mA) V
F
ALL 1.2 1.50 V
Input Forward Voltage
Reverse Leakage Current (V
R
= 5.0 V) I
R
ALL 0.001 10 µA
DETECTOR
(I
C
= 1.0 mA, I
F
= 0) BV
CEO
ALL 50 100 V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
(I
C
= 100 µA, I
F
= 0) BV
CBO
CNX83A.W
70 120 V
SL5583.W
Emitter-Collector Breakdown Voltage (I
E
= 100 µA, I
F
= 0) BV
ECO
ALL 7 10 V
(V
CE
= 10 V, I
F
= 0) ALL 0.001 0.050
CNX82A.W
0.5 10
(V
CE
= 10 V, I
F
= 0) CNX83A.W
Collector-Emitter Dark Current (T
A
= 70°C) I
CEO
SL5582.W
0.5
µA
SL5583.W
(V
CE
= 10 V, I
F
= 0) SL5582.W
50
(T
A
= 100°C) SL5583.W
Collector-Base Dark Current (V
CB
= 10 V) I
CBO
CNX83A.W
20 nA
SL5583.W
Capacitance (V
CE
= 0 V, f = 1 MHz) C
CE
ALL 8 pF
INDIVIDUAL COMPONENT CHARACTERISTICS
Note
** Typical values at T
A
= 25°C
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
4/13/00 200024D
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
DC Characteristic Test Conditions Symbol Device Min Typ** Max Units
(I
F
= 10 mA, V
CE
= 0.4 V) ALL 40
CNX82A.W
40 250
(I
F
= 10 mA, V
CE
= 5 V)
CNX83A.W
SL5582.W
40 320
SL5583.W
Current Transfer Ratio, (I
F
= 10 mA, V
CE
= 5 V) SL5582.W
25 320
Collector-Emitter (T
A
= 100°C) CTR SL5583.W %
(I
F
= 1 mA, V
CE
= 5 V)
CNX82A.W
10 100
CNX83A.W
(I
F
= 2 mA, V
CE
= 5 V)
SL5582.W
20
SL5583.W
(I
F
= 2 mA, V
CE
= 5 V) SL5582.W
15
(T
A
= 100°C) SL5583.W
Saturation Voltage (I
F
= 10 mA, I
C
= 4 mA) V
CE(sat)
ALL 0.19 0.4 V
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 100 !) ALL 3
Turn-on Time
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 1 k!)
t
on
ALL 12
µs
(I
F
= 16 mA, V
CC
= 5 V, R
L
= 1 k!)
SL5582.W
20
SL5583.W
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 100 !) ALL 3
Turn-off Time
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 1 k!)
t
off
ALL 12
µs
(I
F
= 16 mA, V
CC
= 5 V, R
L
= 1 k!)
SL5582.W
50
SL5583.W
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
Characteristic Test Conditions Symbol Min Typ** Max Units
Input-Output Isolation Voltage (I
I-O
"#1 µA, 1 min.) V
ISO
5300 Vac(rms)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
!
Isolation Capacitance (V
I-O
= $, f = 1 MHz) C
ISO
0.5 pf
External air gap (clearance) 9.6 mm
External tracking path (creepage) 8.0 mm
Internal plastic gap (clearance) 1.0 mm
ISOLATION CHARACTERISTICS
Note
** Typical values at T
A
= 25°C
300 .300W VDE 0884
Order
Entry
Option Identifier Description
ORDERING INFORMATION
P1-P3P4-P5

CNX83A300W

Mfr. #:
Buy CNX83A300W
Manufacturer:
ON Semiconductor / Fairchild
Description:
Transistor Output Optocouplers Optocoupler Phototransistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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