OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VSLY5850

P1-P3P4-P5
VSLY5850
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 28-Mar-13
1
Document Number: 83160
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLight
TM
portfolio, the VSLY5850 is an
infrared, 850 nm emitting diode based on GaAlAs surface
emitter chip technology with extreme high radiant intensity,
high optical power and high speed, molded in a clear,
untinted plastic package, with a parabolic lens.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λ
p
= 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Narrow angle of half intensity: ϕ = ± 3°
• Suitable for high pulse current operation
• Good spectral matching with CMOS cameras
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
• Smoke-automatic fire detectors
•IR Flash
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
22114
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) t
r
(ns)
VSLY5850 600 ± 3 850 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSLY5850 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
190 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R
thJA
230 K/W
VSLY5850
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 28-Mar-13
2
Document Number: 83160
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
22116
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
22115
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.65 1.9 V
I
F
= 1 A, t
p
= 100 μs V
F
2.9 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.45 mV/K
I
F
= 10 mA TK
VF
- 1.25 mV/K
Reverse current I
R
not designed for reverse operation μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
300 600 900 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
5100 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
55 mW
Temperature coefficient of φ
e
I
F
= 100 mA TKφ
e
- 0.35 %/K
Angle of half intensity ϕ ± 3 deg
Peak wavelength I
F
= 100 mA λ
p
840 850 870 nm
Spectral bandwidth I
F
= 100 mA Δλ 30 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.25 nm/K
Rise time I
F
= 100 mA t
r
10 ns
Fall time I
F
= 100 mA t
f
10 ns
VSLY5850
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 28-Mar-13
3
Document Number: 83160
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
t
p
- Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
22097
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5
t
p
= 100 µs
1
10
100
1000
10 000
0.001 0.01 0.1 1
22117
I
F
- Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
t
P
= 100 µs
0.1
1
10
100
1000
11 0 100 1000
16971
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
λ - Wavelength (nm)
21776-1
Φ
e, rel
- Relative Radiant Power
0
0.25
0.5
0.75
1
650 750 850 950
I
F
= 30 mA
22132
0.6 00.20.4
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
P1-P3P4-P5

VSLY5850

Mfr. #:
Buy VSLY5850
Manufacturer:
Description:
Infrared Emitters High Speed Emitter 5V 190mW 850nm 3Deg
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet