IXFN20N120P Datasheet IXFN20N120P | P1-P3

DS99889A (04/08)

V

DSS

= 1200V

I

D25

= 20A

R

DS(on)

≤≤

≤ 570m

ΩΩ

Ω

t

rr

≤≤

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1200 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 1200 V

V

GSS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C20A

I

DM

T

C

= 25°C, pulse width limited by T

JM

50 A

I

A

T

C

= 25°C10A

E

AS

T

C

= 25°C1J

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

,T

J

≤ 150°C 20 V/ns

P

D

T

C

= 25°C 595 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from case for 10s 300 °C

V

ISOL

50/60 Hz, RMS t = 1min 2500 V~

I

ISOL

≤ 1mA t = 1s 3000 V~

M

d

Mounting torque 1.5/13 Nm/lb.in.

Terminal connection torque 1.3/11.5 Nm/lb.in.

Weight 30 g

IXFN20N120P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 1200 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 3.5 6.5 V

I

GSS

V

GS

= ± 30V, V

DS

= 0V ± 200 nA

I

DSS

V

DS

= V

DSS

25 μA

V

GS

= 0V T

J

= 125°C 5 mA

R

DS(on)

V

GS

= 10V, I

D

= 10A, Note 1 570 mΩ

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

Features

• International standard package

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Fast recovery diode

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

Advantages

• Easy to mount

• Space savings

• High power density

Polar

TM

Power MOSFET

HiPerFET

TM

Applications:

z

High Voltage Switched-mode and

resonant-mode power supplies

z

High Voltage Pulse Power Applications

z

High Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF

Generators

z

High Voltage DC-DC converters

z

High Voltage DC-AC inverters

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN20N120P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 10A, Note 1 10 16 S

C

iss

11.1 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 600 pF

C

rss

60 pF

R

Gi

Gate input resistance 1.60 Ω

t

d(on)

Resistive Switching Times 49 ns

t

r

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 10A 45 ns

t

d(off)

R

G

= 1Ω (External) 72 ns

t

f

70 ns

Q

g(on)

193 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 10A 74 nC

Q

gd

85 nC

R

thJC

0.21 °C/W

R

thCS

0.05 °C/W

Source-Drain Diode Characteristic Values

T

J

= 25°C unless otherwise specified) Min. Typ. Max.

I

S

V

GS

= 0V 20 A

I

SM

Repetitive, pulse width limited by T

JM

80 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

300 ns

Q

RM

0.84 μC

I

RM

9 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

I

F

= 10A, -di/dt = 100A/μs

V

R

= 100V

SOT-227B Outline

IXFN20N120P

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

2

4

6

8

10

12

14

16

18

20

22

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 1. Output Characteristics

@ 25ºC

0

2

4

6

8

10

12

14

16

18

20

024681012

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7

V

8

V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

5

10

15

20

25

30

35

40

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7

V

8

V

Fig. 3. Output Characteristics

@ 125ºC

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 101214161820222426

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 10A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 20A

I

D

= 10A

Fig. 5. R

DS(on)

Normalized to I

D

= 10A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35 40

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

IXFN20N120P

IXFN20N120P

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