FASTIRFET™
IRFHE4250DPbF
1
www.irf.com © 2013 International Rectifier
September 26, 2013
HEXFET
®
Power MOSFET
Base part number Package Type
Standard Pack Orderable Part Number
Form Quantity
IRFHE4250DPbF Dual PQFN 6mm x 6mm Tape and Reel 4000 IRFHE4250DTRPbF
Q1 Q2
V
DSS
25 25 V
R
DS(on)
max
(@V
GS
= 4.5V)
4.10 1.35
m
Qg
(typical)
13 35 nC
I
D
(@T
C
= 25°C)
60 60 A
Features
Benefits
Control and synchronous MOSFETs in one package
Increased power density
Low charge control MOSFET (13nC typical)
results in
Lower switching losses
Low R
DSON
synchronous MOSFET (<1.35m)
Lower conduction losses
RoHS compliant, halogen-free
Environmentally friendlier
MSL2, industrial qualification
Increased reliability
Intrinsic schottky diode with low forward voltage on Q2
Lower switching losses
Low thermal resistance path to the top
Increased power density
Low thermal resistance path to the PCB
Increased power density
Notes through are on page 12
Absolute Maximum Ratings
Parameter Q1 Max. Q2 Max. Units
V
GS
Gate-to-Source Voltage ± 16 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 86 303 A
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ 10V 69 243
I
D
@ T
C
= 25°C Continuous Drain Current
(Source Bonding Technology Limited)
60 60
I
DM
Pulsed Drain Current 180 525
P
D
@T
C
= 25°C Power Dissipation 156 156 W
P
D
@T
C
= 70°C Power Dissipation 100 100
Linear Derating Factor 1.3 1.3 W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
-55 to + 150
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
DUAL PQFN 6X6 mm
Thermal Resistance
Parameter Q1 Max. Q2 Max. Units
R
JC
(Bottom)
Junction-to-Case 3.7
R
JC
(Top)
Junction-to-Case 0.91
°C/W
R
JA
Junction-to-Ambient 24
R
JA
(<10s)
Junction-to-Ambient
17
0.91
2.1
24
17
