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VS-MBR4045CTPBF

P1-P3P4-P6P7-P7
VS-MBR4045CTPbF, VS-MBR4045CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
1
Document Number: 94294
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 20 A
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 20 A
V
R
45 V
V
F
at I
F
0.58 V
I
RM
max. 95 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
20 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform (per device) 40 A
V
RRM
45 V
I
FRM
T
C
= 118 °C (per leg) 40
A
I
FSM
t
p
= 5 μs sine 900
V
F
20 A
pk
, T
J
= 125 °C 0.58 V
T
J
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR4045CTPbF VS-MBR4045CT-N3 UNITS
Maximum DC reverse voltage V
R
45 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 118 °C, rated V
R
20
A
per device 40
Peak repetitive forward current per leg I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 118 °C 40
Maximum peak one cycle non-repetitive
surge current per leg
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
900
10 ms sine or 6 ms rect. pulse 210
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 4.40 mH 20 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
VS-MBR4045CTPbF, VS-MBR4045CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
2
Document Number: 94294
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
20 A
T
J
= 25 °C
0.60
V
40 A 0.78
20 A
T
J
= 125 °C
0.58
40 A 0.75
Maximum instantaneus reverse current I
RM
(1)
T
J
= 25 °C
Rated DC voltage
1
mAT
J
= 100 °C 50
T
J
= 125 °C 95
Maximum junction capacitance C
T
V
R
= 5 V
DC,
(test signal range 100 kHz to 1 MHz) 25 °C 900 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 65 to 150
°C
Maximum storage temperature range T
Stg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 1.5
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
(Only for TO-220)
0.50
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation
(For D
2
PAK and TO-262)
50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB MBR4045CT
VS-MBR4045CTPbF, VS-MBR4045CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
3
Document Number: 94294
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
2.00.4
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1000
0.1
1
10
100
0.01
0.001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
15 35 45
25510 20 30 40
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
900
020 50
200
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10 30 40
T
J
= 25 °C
300
400
500
600
700
800
0.001
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1 10
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-MBR4045CTPBF

Mfr. #:
Buy VS-MBR4045CTPBF
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 40 Amp 45 Volt Common Cathode
Lifecycle:
New from this manufacturer.
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