SM6HT27A

March 2007 Rev 7 1/8
8
SM6HT
High temperature Transil™ for automotive applications
Features
High performance TRANSIL designed to fit
high temperature environment like automotive
applications
High reliability planar technology
High performance in voltage regulation mode
Very low leakage current:
I
R
max. = 5 µA @ T
amb
= 150° C
Peak pulse power: 600 W (10/1000 µs)
Fast response time
Unidirectional type
Low clamping factor
Description
This high performance Transil series has been
designed to fit high temperature environment
such as automotive applications, using surface
mount technology.
These devices are using high reliability planar
technology resulting in high performances in
voltage regulation mode and low leakage current
at high temperature.
TM: TRANSIL is a trademark of STMicroelectronics
Order codes
Part number Marking
SM6HT24A EMB
SM6HT27A EPB
SM6HT30A ERB
SM6HT36A EVB
SM6HT39A EXB
SM6HT43A EYB
K
A
SMB
(JEDEC DO-214AA)
www.st.com
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
Characteristics SM6HT
2/8
1 Characteristics
Table 1. Absolute maximum rating (T
amb
= 25° C)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation
(1)
1. for a surge greater than the maximum values, the diode will fail in short circuit.
T
j
initial = T
amb
600 W
P Power dissipation on infinite heatsink T
amb
= 50° C 6 W
I
FSM
Non repetitive surge peak forward
current for unidirectional types
t
p
= 10 ms
T
j
initial = T
amb
75 A
T
stg /
T
j
Storage and operating junction temperature range -65 to 175 °C
T
L
Maximum lead temperature for soldering during 10 s. 260 °C
Table 2. Thermal resistances
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads 20 °C/W
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout 100 °C/W
Table 3. Electrical characteristics (T
amb
= 25° C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
V
F
Forward voltage drop
V
F
< 3.5 V @ I
F
= 50 A
(pulse test: t
p
500 µs)
I
Z
Continuous regulation current
V
CL
V
RM
V
F
V
I
RM
I
PP
I
F
I
V
BR
Types Marking
I
RM
@ V
BR
V
BR
@ I
R
(1)
V
CL
@ I
PP
αT
(2)
I
Z
@
T
amb
=25° C T
amb
=150° C 10/1000 µs T
amb
=50°C
max max min nom max max max max
µA µA V V V V mA V A 10
-4
/°C mA
SM6HT24A EMB
25
20.5 22.8 24 25.2
1
33.2 18.0 9.4 50
SM6HT27A EPB 23.1 25.7 27 28.4 37.5 16.0 9.6 44
SM6HT30A ERB 25.6 28.5 30 31.5 41.5 14.5 9.7 40
SM6HT36A EVB 30.8 34.2 36 37.8 49.9 12.0 9.9 33
SM6HT39A EXB 33.3 37.1 39 41.0 53.9 11.1 10.0 20
SM6HT43A EYB 36.8 40.9 43 45.2 59.3 10.1 10.1 28
1. Pulse test: t
p
< 50 ms
2. ΔV
BR
= αT x (T
amb
- 25) x V
BR
(25° C)
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SM6HT Characteristics
3/8
Figure 1. Peak power dissipation versus
initial junction temperature
Figure 2. Continuous power dissipation
versus ambient temperature
%
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150 175 200
T initial(°C)
j
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150 175
R=R
th(j-a) th(j-l)
R =100°C/W
th(j-a)
T (°C)
amb
P(W)
Figure 3. Peak pulse power versus
exponential pulse duration
(T
j
initial = 25° C)
Figure 4. Clamping voltage versus peak
pulse current (T
j
initial = 25° C)
P (kW)
PP
0.1
1.0
10.0
0.01 0.10 1.00 10.00
T
j
initial = 25 °C
t (ms)
p
I (A)
PP
1.0E-01
1.0E+00
1.0E+01
1.0E+02
10 100
10/1000 µs
T
j
initial=25 °C
8/20 µs
V (V)
CL
SM6HT24A
SM6HT27A
SM6HT30A
SM6HT36A
SM6HT39A
SM6HT43A
Figure 5. Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6. Peak forward voltage drop versus
peak forward current (typical
values)
C(pF)
100
1000
1 10 100
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
SM6HT24A
SM6HT27A
SM6HT30A
SM6HT36A
SM6HT39A
SM6HT43A
0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.1
1.0
10.0
100.0
I (A)
FM
V (V)
FM
T =25°C
j
T =175°C
j

SM6HT27A

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
ESD Suppressors / TVS Diodes 600W 27V Unidrect
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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