VS-10MQ100NTRPbF
www.vishay.com
Vishay Semiconductors
Revision: 17-May-17
1
Document Number: 94119
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10MQ100NTRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRODUCT SUMMARY
Package SMA (DO-214AC)
I
F(AV)
1 A
V
R
100 V
V
F
at I
F
0.78 V
I
RM
1 mA at 125 °C
T
J
max. 150 °C
Diode variation Single
E
AS
1.0 mJ
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1 A
V
RRM
100 V
I
FSM
t
p
= 5 μs sine 120 A
V
F
1.5 A
pk
, T
J
= 125 °C 0.68 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10MQ100NTRPbF UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
I
F(AV)
50 % duty cycle at T
L
= 126 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
1.5
A
50 % duty cycle at T
L
= 135 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
1
Maximum peak one cycle
non-repetitive surge current, T
J
= 25 °C
See fig. 6
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
V
RRM
applied
120
A
10 ms sine or 6 ms rect. pulse 30
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH 1.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.5 A