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NCP1423DMR2

P1-P3P4-P6P7-P9P10-P12P13-P14
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 8
1 Publication Order Number:
NCP1423/D
NCP1423, SCV1423
400 mA Sync-Rect PFM
Step-Up DC-DC Converter
with True-Cutoff and
Ring-Killer
NCP1423 is a monolithic micropower high frequency step−up
switching converter IC specially designed for battery operated
hand−held electronic products. It integrates Synchronous Rectifier for
improving efficiency as well as eliminating the external Schottky
Diode. High switching frequency (up to 600 kHz) allows low profile
inductor and output capacitor being used. When the IC is disabled,
internal conduction path from LX or BAT to OUT is blocked, OUT pin
is isolated from the battery. This achieves True−Cutoff. Ring−Killer is
also integrated to eliminate the high frequency ringing in discontinuous
conduction mode. Low−Battery Detector, Cycle−by−Cycle Current
Limit, Overvoltage Protection and Thermal Shutdown provide
value−added features for various battery operated application. With all
of these functions ON, the quiescent supply current is only 9.0 mA. This
device is available in compact Micro10 package.
Features
• High Efficiency: 92% for 3.3 V Output@ 400 mA from 2.5 V Input
87% for 1.8 V Output@ 70 mA from 1.2 V Input
• High Switching Frequency, up to 600 kHz (not hitting current limit)
• Low Quiescent Current of 9.0 mA
• Low Battery Detector
• 0.8 V Startup
• External Adjustable Output Voltage
• ±1.5% Output Voltage Accuracy
• Ring−Killer for Discontinuous Conduction Mode
• Thermal Shutdown
• 1.2 A Cycle−by−Cycle Current Limit
• Output Current up to 400 mA @ V
OUT
= 3.3 V,
200 mA @ V
OUT
= 1.8 V
• Overvoltage Protection
• Low Profile and Minimum External Part
• Open Drain Low−Battery Detector Output
• Compact Micro10 Package
• SCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Wireless Optical Mouse
• Wireless Headsets
• Internet Audio Players
• Personal Digital Assistants (PDAs)
• Hand−held Instruments
• Conversion from one/two NiMH or NiCd cells to 1.8 V / 3.3 V
PIN CONNECTIONS
Device Package Shipping
†
ORDERING INFORMATION
NCP1423DMR2G Micro10
(Pb−Free)
4000 Tape & Reel
http://onsemi.com
MARKING
DIAGRAM
XXX = DAR (NCP1423)
= GEN (SCV1423)
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Top View)
Micro10
DM SUFFIX
CASE 846B
EN
LBO
REF
FB
OUT
LBI
ADEN
BAT
GND
LX
1
2
3
4
5
10
9
8
7
6
Micro10
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
XXX
AYWG
G
SCV1423DMR2G Micro10
(Pb−Free)
4000 Tape & Reel
(Note: Microdot may be in either location)
NCP1423, SCV1423
http://onsemi.com
2
Figure 1. Typical Operation Circuit
EN
REF
FB
GND
OUT
BAT
LX
ADEN
LBI
LBO
OFF
ON
OFF
ON
R1
R2
100k
5.6 mH
10 mF
C
IN
22 mF
C
OUT
0.2 mF
* Optional
*
Low battery
open drain output
Low battery
sense input
NCP1423, SCV1423
R4
R3
C1
PIN DESCRIPTION
Pin No. Symbol Description
1 EN Low−Battery Detector Input and Enable. With this pin pulled down below 0.5 V, the device will be disabled
and will enter shutdown mode
2 REF
1.195 V Reference Voltage Output, bypass with 0.1 mF capacitor if this pin is not loaded, with a 1.0 mF
bypassing capacitor, this pin can be loaded up to 2.5 mA @ V
OUT
= 3.3 V.
3 FB Output Voltage Feedback Input
4 GND Ground
5 OUT Power Output. OUT provides bootstrap power to the IC
6 BAT Battery supply input pin and connection for internal Ring−Killer
7 LX N−Channel and P−Channel Power MOSFET Drain
8 ADEN Auto Discharge Input
9 LBI Low−Battery Detector Input
10 LBO Open−Drain Low−Battery Detector Output. Output is Low when V
LBI
is < 500 mV.
LBO is high impedance shutdown
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply (Pin 6) V
OUT
−0.3, 6.0 V
Input / Output Pins (Pins 1−3,5,7−10) V
IO
−0.3, 6.0 V
Thermal Characteristics
Micro10 Plastic Package, Case 846B, T
A
= 25°C
Thermal Resistance Junction−to−Air
P
D
R
q
JA
480
250
mW
°C/W
Operating Junction Temperature Range T
J
− 40 to + 150 °C
Operating Ambient Temperature Range T
A
− 40 to + 85 °C
Storage Temperature Range T
stg
− 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: ESD data available upon request.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114.
Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115.
2. The maximum package power dissipation limit must not be exceeded.
P
D
+
T
J(max)
* T
A
R
qJA
3. Latchup Current Maximum Rating: ±150 mA per JEDEC standard: JESD78.
4. Moisture Sensitivity Level: MSL 1 per IPC/JEDEC standard: J−STD−020A.
5. Measured on approximately 1 in sq of 1 oz Cu.
NCP1423, SCV1423
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(V
OUT
= 3.3 V, T
A
= 25°C for typical value, −40°C v T
A
v 85°C for min/max values unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Operating Voltage V
IN
0.8 − V
OUT
V
Output Voltage Range V
OUT
1.8 − 3.3 V
Minimum Input Voltage for Startup V
IN_MIN
− 0.85 0.90 V
Reference Voltage
(I
LOAD
= 0 mA, Cref = 100 nF, T
A
= 25°C)
V
REF
1.177 1.195 1.213 V
Reference Voltage Temperature Coefficient TC
VREF
− 0.05 − mV/°C
FB Input Threshold (I
LOAD
= 0 mA, T
A
= −40°C to 85°C) V
FB
0.489 0.500 0.512 V
FB Input Threshold (I
LOAD
= 0 mA, T
A
= 25°C) V
FB
0.493 0.500 0.508 V
FB Input Current I
FB
− 1.0 − nA
Internal NFET ON−Resistance (I
LX
=100 mA, T
A
= 25°C) (Note 7) R
DS(ON)_N
− 0.3 0.45
W
Internal PFET ON−Resistance (I
LX
=100 mA, T
A
= 25°C) (Note 7) R
DS(ON)_P
− 0.6 0.8
W
LX Switch Current Limit (NFET) (Note 7) I
LIM
− 1.2 − A
Operating Current into OUT (V
FB
= 0.7 V, T
A
= 25°C) I
Q
− 9.0 12
mA
Operating Current into BAT
(V
BAT
= 1.2 V, V
FB
= 0.7 V, V
LX
= 1.2 V, T
A
= 25°C)
I
QBAT
− 2.0 3.0
mA
Shutdown Current into BAT
(LBI/EN = 0 V, V
BAT
= 3.3 V, T
A
= 25°C)
I
BAT_SD
− 0.5 1.5
mA
LX Switch MAX. ON−Time (V
FB
= 0 V) t
ON
1.15 1.4 2.8
ms
LX Switch MIN. OFF−Time (V
FB
= 0 V) t
OFF
80 200 350 ns
BAT to LX Resistance (V
FB
= 0.7 V) R
BAT_LX
− 100 −
W
LBI Input Threshold V
LBI
0.475 0.500 0.525 V
LBI Input Hysteresis V
LBI_HYS
− 15 − mV
LBI Input Current I
LBI
− 1.5 − nA
LBO Low Output Voltage (V
LBI
= 0 V, I
SINK
= 1.0 mA) V
LBO_L
− − 0.2 V
Maximum Continuous Output Current (V
IN
= 2.5 V, V
OUT
= 3.3 V) (Note 7) I
OUT
200 − − mA
Maximum Continuous Output Current (V
IN
= 0.8 V, V
OUT
= 3.3 V) (Note 7) I
OUT
100 − − mA
Soft Start Time
(V
IN
= 1.2 V, T
A
= 25°C, C
REF
= 100 nF, V
OUT
= 3.3 V) (Note 6)
T
SS
− 2.0 8.0 ms
EN Shutdown Threshold (V
BAT
= 1.2 V) V
SHDN
0.34 0.50 0.68 V
EN Input Current I
EN
− 150 − nA
ADEN Threshold (V
BAT
= 0.9 V to 3.3 V) V
ADEN
0.5*V
BAT
V
ADEN Input Current I
ADEN
− 100 − nA
ADEN Switch Resistance R
ADEN
100
W
Thermal Shutdown Temperature (Note 7) T
SHDN
− − 145 °C
Thermal Shutdown Hysteresis (Note 7) T
SDHYS
− 30 − °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Value depends on voltage at V
OUT
.
7. Values are guaranteed by design.
P1-P3P4-P6P7-P9P10-P12P13-P14

NCP1423DMR2

Mfr. #:
Buy NCP1423DMR2
Manufacturer:
ON Semiconductor
Description:
IC REG BOOST ADJ 1.2A 10MICRO
Lifecycle:
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