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SI1424EDH-T1-GE3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 67198
S11-0654-Rev. B, 11-Apr-11
Vishay Siliconix
Si1424EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Normalized On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
=1.5V,1.8V;I
D
=1.5A
V
GS
=2.5V,4.5V;I
D
=5A
T
J
-Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
012345
I
D
=5A;T
J
= 25 °C
I
D
= 0.5 A; T
J
= 125 °C
I
D
= 0.5 A; T
J
= 25 °C
I
D
=5A;T
J
= 125 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.01 001100.01
Source-Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area, Junction-to-Ambient
0.1
0.2
0.3
0.4
0.5
0.6
0.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
1s,10s
Limited by R
DS(on)
*
BVDSS Limited
1ms
100 μs
10 ms
DC
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
Document Number: 67198
S11-0654-Rev. B, 11-Apr-11
www.vishay.com
5
Vishay Siliconix
Si1424EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0 25 50 75 100 125 150
Package Limited
T
F
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
F
- Foot Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 67198
S11-0654-Rev. B, 11-Apr-11
Vishay Siliconix
Si1424EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67198
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 125 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Single Pulse
0.02
0.05
0.2
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
01110
-1
10
-4
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
0.05
Single Pulse
0.02
P1-P3P4-P6P7-P9P10-P12

SI1424EDH-T1-GE3

Mfr. #:
Buy SI1424EDH-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 8V Vgs SC70-6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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