2002 Sep 02 3
NXP Semiconductors Product data sheet
Schottky barrier double diode BAT74V
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT666 standard mounting conditions.
Soldering
The only recommended soldering method is reflow soldering.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
continuous forward voltage I
F
= 0.1 mA 240 mV
I
F
= 1 mA 320 mV
I
F
= 1 0 mA 400 mV
I
F
= 30 mA 500 mV
I
F
= 1 00 mA; note 1; see Fig.2 800 mV
I
R
reverse current V
R
= 25 V; note 1; see Fig.3 2 μA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; see Fig.4 10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W