IRGP4068DPbF/IRGP4068D-EPbF
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Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 19. Maximum Diode Repetitive Forward
Peak Current vs. Case Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.0248 0.000014
0.0652 0.000050
0.1537 0.001041
0.2065 0.013663
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.0400 0.000030
0.7532 0.000717
0.8317 0.004860
0.3766 0.036590
25 50 75 100 125 150 175
Case Temperature (°C)
0
20
40
60
80
100
120
140
160
R
e
p
e
t
i
t
i
v
e
P
e
a
k
C
u
r
r
e
n
t
(
A
)
D=0.5
D=0.2
D=0.1
Square Pulse,
f = 20KHz
t
T = 50us
Fig 20. Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
25 50 75 100 125 150 175
T
J
, Temperature (°C)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
G
E
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
N
o
r
m
a
l
i
z
e
d
)
I
C
= 1.4mA
