Characteristics STPS30H100C
2/10 Doc ID 6347 Rev 8
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.54 x I
F(AV)
+ 0.0086 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current
T
c
= 155 °C
δ = 0.5
Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 250 A
I
RRM
Repetitive peak reverse current t
p
= 2 µs square, F= 1 kHz 1 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 3 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 10800 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature range
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
-40 to +175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Tot al
1.6
0.9
°C/W
R
th(c)
Coupling 0.1
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
5µA
T
j
= 125 °C 2 6 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 15 A
0.80
V
T
j
= 125 °C 0.64 0.67
T
j
= 25 °C
I
F
= 30 A
0.93
T
j
= 125 °C 0.74 0.8
Ptot
dTj
--------------
1
Rth j a–()
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