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PD638B

P1-P3P4-P6P7-P7
LifecyclePhase:
Revision : 7
Expired Period: Forever
Release Date:2015-10-06 13:32:02.0
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : 9.28.2015. Issue No: DPD-0000104_Rev.7
www.everlight.com
2.75 ×5.25mm Silicon PIN Photodiode
PD638B
F
eatures
․Fast response times
․High photo sensitivity
․Small junction capacitance
․Pb free
․The product itself will remain within RoHS compliant version.
Description
․PD638B is a high speed and sensitive PIN photodiode in a flat side
view plastic package. The epoxy package itself is an IR filter , spectrally
matched to IR emitter.
Applications
․High speed photo detector
․Camera
․Optoelectronic switch
․VCRs , Video camera
LifecyclePhase:
Revision : 7
Expired Period: Forever
Release Date:2015-10-06 13:32:02.0
DATASHEET
2.75 ×5.25mm Silicon PIN Photodiode
PD638B
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : 9.28.2015. Issue No: DPD-0000104_Rev.7
www.everlight.com
Device Selection Guide
Chip
Materials
Lens Color
GaAlAs Black
Absolute Maximum Ratings (Ta=25 )℃
Parameter Symbol Rating Unit
Reverse Voltage V
R
32
mA
Power Dissipation Pd
150
mW
Operating Temperature T
opr
-40 ~ +85
℃
Storage Temperature T
stg
-40 ~ +100
℃
Soldering Temperature(*1) T
sol
260
℃
Notes: *1: Soldering time
≦
5 seconds.
:
LifecyclePhase:
Revision : 7
Expired Period: Forever
Release Date:2015-10-06 13:32:02.0
DATASHEET
2.75 ×5.25mm Silicon PIN Photodiode
PD638B
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : 9.28.2015. Issue No: DPD-0000104_Rev.7
www.everlight.com
Electro
-Optical Characteristics (Ta=25 )℃
Parameter Symbol Min. Typ. Max. Unit Condition
Rang of Spectral
Bandwidth
λ0.5 840 ----- 1100
nm
-----
Wavelength of Peak
Sensitivity
λp ----- 940 -----
nm
-----
Open-Circuit Voltage VOC ----- 0.35 -----
V
Ee=5m W/cm2
λp=940nm
Short- Circuit Current ISC ----- 18 -----
uA
Ee=1m W/cm2
λp=940nm
Reverse Light Current IL 10.2 18 -----
uA
Ee=1m W/cm2
λp=940nm
VR=5V
Dark Current Id ---- 5 30
nA
Ee=0m W/cm2
VR=10V
Reverse Breakdown BVR 32 170 -----
V
Ee=0m W/cm2
IR=100
μA
Total Capacitance Ct ---- 25 ----
pF
Ee=0m W/cm2
VR=3V
f=1MHZ
Rise/Fall Time tr/tf ---- 50/50 ----
nS
VR=10V
RL=1K
Ω
Rank
Parameter Symbol Min Max Unit Test Condition
BIN1
IL
10.2 16.5
uA
Ee=1m W/cm2
λp=940nm
VR=5V
BIN2
13.5 22.0
BIN3
18.0 27.5
BIN4
22.5 33.0
P1-P3P4-P6P7-P7

PD638B

Mfr. #:
Buy PD638B
Manufacturer:
Everlight
Description:
Photodiodes Infrared Photodiode
Lifecycle:
New from this manufacturer.
Delivery:
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