BFR181T
Aug-09-20011
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
f
T
= 8 GHz
F = 1.45 dB at 900 MHz
VPS05996
1
2
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR181T RFs 1 = B 2 = E 3 = C SC75
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
20 mA
Base current I
B
2
Total power dissipation
T
S
79°C
1)
P
tot
175 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
st
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
405
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
