TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
T4-LDS-0132 Rev. 1 (091476) Page 1 of 4
DEVICES LEVELS
2N5151 2N5153
JAN
2N5151L 2N5153L
JANTX
2N5151U3 2N5153U3
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
80 Vdc
Collector-Base Voltage V
CBO
100 Vdc
Emitter-Base Voltage V
EBO
5.5 Vdc
Collector Current I
C
2.0 Adc
Total Power Dissipation
2N5151, 2N5153, L
2N5151, 2N5153, L
2N5151U3, 2N5153U3
2N5151U3, 2N5153U3
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
@ T
A
= +25°C
(3)
@ T
C
= +25°C
(4)
P
T
1.0
10
1.16
100
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
Thermal Resistance, Junction-to Case
R
θJC
10
1.75 (U3)
°C/W
Note:
1) Derate linearly 5.7mW/°C for T
A
> +25°
2) Derate linearly 66.7mW/°C for T
A
> +25°
3) Derate linearly 6.63mW/°C for T
A
> +25°
4) Derate linearly 571mW/°C for T
A
> +25°
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc, I
B
= 0
V
(BR)CEO
80 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc, I
C
= 0
V
EB
= 5.5Vdc, I
C
= 0
I
EBO
1.0
1.0
µAdc
mAdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 0
V
CE
= 100Vdc, V
BE
= 0
I
CES
1.0
1.0
µAdc
mAdc
Collector-Base Cutoff Current
V
CE
= 40Vdc, I
B
= 0
I
CEO
50 µAdc
TO-5
2N5151L, 2N5153L
(See Figure 1)
TO-39 (TO-205AD)
2N5151, 2N5153
U-3
2N5151U3, 2N5153U3
