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TLP251(TP1,F)

P1-P3P4-P6P7-P7
TLP251
2007-10-01 1
TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC
TLP251
Inverter For Air Conditioner
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251 consists of a
GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
z Input threshold
current: I
F
=5mA(max.)
z Supply current (I
CC
): 11mA(max.)
z Supply voltage (V
CC
): 10−35V
z Output current (I
O
): ±0.4A(max.)
z Switching time (t
pLH
/ t
pHL
): 1μs(max.)
z Isolation voltage: 2500Vrms(min.)
z UL recognized: UL1577, file no.E67349
z Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890V
PK
Highest Permissible Over Voltage
: 4000V
PK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
Truth Table
Tr1 Tr2
On On Off Input
LED
Off Off On
Pin Configuration (top view)
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
1
2
3
4
5 : GND
6 : V
O
(Output)
7 : N.C.
8 : V
CC
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
Unit in mm
Schematic
A 0.1μF bypass capcitor must be connected
between pin 8 and 5(see Note 5).
2
V
F
I
F
3
I
CC
(T
r
1)
V
O
GND
(T
r
2)
I
O
V
CC
8
6
5
TLP251
2007-10-01 2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current I
F
20 mA
Forward current derating (Ta ≥ 70°C) ΔI
F
/ ΔTa − 0.36 mA / °C
Peak transient forward current (Note 1) I
FPT
1 A
Reverse voltage V
R
5 V
LED
Junction temperature T
j
125 °C
“H” peak output current
(P
W
≤ 2.0μs, f ≤ 15kHz)
(Note 2)
I
OPH
− 0.4 A
“L” peak output current
(P
W
≤ 2.0μs, f ≤ 15kHz)
(Note 2)
I
OPL
0.4 A
(Ta ≤ 70°C) 35
Output voltage
(Ta = 85°C)
V
O
24
V
(Ta ≤ 70°C) 35
Supply voltage
(Ta = 85°C)
V
CC
24
V
Output voltage derating
(Ta ≥ 70°C)
ΔV
O
/ ΔTa − 0.73 V / °C
Supply voltage derating
(Ta ≥ 70°C)
ΔV
CC
/ ΔTa − 0.73 V / °C
Detector
Junction temperature T
j
125 °C
Operating frequency (Note 3) f 25 kHz
Operating temperature range T
opr
−20~85 °C
Storage temperature range T
stg
−55~125 °C
Lead soldering temperature(10s) T
sol
260 °C
Isolation voltage (AC, 1min.,
R.H.≤ 60%) (Note 4)
BV
S
2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width P
W
≤ 1μs, 300pps
Note 2: Expornential waveform
Note 3: Expornential waveform, I
OPH
≤ −0.25A(≤ 2.0μs), I
OPL
≤ +0.25A(≤2.0μs)
Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6,
7 and 8 shorted together.
Note 5: A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the
operation of the high gain linear ampifier. Failure to provide the bypassing may impair the
swiching property.The total lead length between capacitor and coupler should not
exceed 1cm.
TLP251
2007-10-01 3
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Input current, on (Note6) I
F(ON)
7
8
10 mA
Input voltage, off V
F(OFF)
0
―
0.8 V
Supply voltage V
CC
10
―
30 20 V
Peak output current I
OPH
/ I
OPL
― ―
±0.1 A
Operating temperature T
opr
−20
25
70 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 6: Input signal rise time(fall time)<0.5μs.
Electrical Characteristics
(Ta = −20
~
70°C, unless otherwise specified)
Characteristic Symbol
Test
Cir−
cuit
Test Condition Min. Typ.* Max. Unit
Input forward voltage V
F
― I
F
= 10 mA , Ta = 25°C ― 1.6 1.8 V
Temperature coefficient of forward
voltage
ΔV
F
/ ΔTa ― I
F
= 10 mA ― −2.0 ― mV / °C
Input reverse current I
R
― V
R
= 5V, Ta = 25°C ― ― 10 μA
Input capacitance C
T
― V = 0 , f = 1MHz , Ta = 25°C ― 45 250 pF
“H” level
I
OPH
1
I
F
= 10mA
V
8−6
= 4V
−0.1 −0.25 ―
Output current
“L” level I
OPL
2
V
CC
=30V
(*1)
I
F
=0
V
6−5
= 2.5V
0.1
0.2
―
A
“H” level V
OH
3
V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω, I
F
= 5mA
11 13.2
―
Output voltage
“L” level
V
OL
4
V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω, V
F
= 0.8V
― −14.5 −12.5
V
V
CC
= 30V, I
F
= 10mA
Ta = 25°C
―
7.5
―
“H” level I
CCH
―
V
CC
= 30V, I
F
= 10mA ―
― 11
V
CC
= 30V, I
F
= 0mA
Ta = 25°C
―
8
―
Supply current
“L” level I
CCL
―
V
CC
= 30V, I
F
= 0mA ―
― 11
mA
Threshould input
current
“Output
L → H
”
I
FLH
―
V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω, V
O
> 0V
―
1.2 5
mA
Threshold input
voltage
“Output
H → L
”
V
FHL
―
V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω, V
O
< 0V
0.8
― ―
V
Supply voltage V
CC
― 10 ― 35 V
Capacitance
(input−output)
C
s
―
Vs = 0 , f = 1MHz
Ta = 25℃
―
1.0 2.0
pF
Resistance (input−output)
R
s
―
Vs = 500V, Ta = 25℃
R.H. ≤ 60%
1×10
12
10
14
―
Ω
* All typical values are at Ta=25°C (*1): Duration of I
O
time ≤ 50μs
P1-P3P4-P6P7-P7

TLP251(TP1,F)

Mfr. #:
Buy TLP251(TP1,F)
Manufacturer:
Toshiba
Description:
Logic Output Optocouplers IGBT DRIVER
Lifecycle:
New from this manufacturer.
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