3SK292
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK292
TV Tuner, VHF RF Amplifier Application
• Superior cross modulation performance.
• Low reverse transfer capacitance: C
rss
= 20 fF (typ.)
• Low noise figure: NF = 1.4dB (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DS
12.5 V
Gate 1-source voltage V
G1S
±8 V
Gate 2-source voltage V
G2S
±8 V
Drain current I
D
30 mA
Drain power dissipation P
D
150 mW
Channel temperature T
ch
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate 1 leakage current I
G1SS
V
DS
= 0, V
G1S
= ±6 V, V
G2S
= 0 ⎯ ⎯ ±50 nA
Gate 2 leakage current I
G2SS
V
DS
= 0, V
G1S
= 0, V
G2S
= ±6 V ⎯ ⎯ ±50 nA
Drain-source voltage V
(BR) DSX
V
G1S
= −0.5 V, V
G2S
= −0.5 V,
I
D
= 100 μA
12.5 ⎯ ⎯ V
Drain current I
DSS
V
DS
= 6 V, V
G1S
= 0, V
G2S
= 4.5 V ⎯ ⎯ 0.1 mA
Gate 1-source cut-off voltage V
G1S (OFF)
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 100 μA 0.3 0.9 1.3 V
Gate 2-source cut-off voltage V
G2S (OFF)
V
DS
= 6 V, V
G1S
= 4.0 V, I
D
= 100 μA 0.5 1.0 1.5 V
Forward transfer admittance ⎪Y
fs
⎪
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA,
f = 1 kHz
19.5 23.5 ⎯ mS
Input capacitance C
iss
⎯ 2.5 3.1 pF
Reverse transfer capacitance C
rss
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA,
f = 1 MHz
⎯ 20 40 fF
Power gain G
ps
23.5 26.0 ⎯ dB
Noise figure NF
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA,
f = 500 MHz (Figure 1)
⎯ 1.4 2.5 dB
Unit: mm
SMQ
JEDEC ―
JEITA ―
TOSHIBA 2-3J1A
Weight: 13 mg (typ.)
Start of commercial production
1996-04
