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DMN5L06WK-7

P1-P3P4-P6
DMN5L06WK
Document number: DS30928 Rev. 8 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN5L06W
K
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN5L06WK-7 SOT-323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-323
TOP VIEW
ESD protected up to 2kV
TOP VIEW
GS
D
DAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
DMN5L06WK
Document number: DS30928 Rev. 8 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN5L06W
K
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
50 V
Gate-Source Voltage
V
GSS
20
V
Drain Current (Note 5) Continuous
Pulsed (Note 6)
I
D
300
800
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance, Junction to Ambient
R
JA
500
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
50
V
V
GS
= 0V, I
D
= 10A
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
60 nA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
1
500
50
A
nA
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.49
1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)




3.0
2.5
2.0
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current
I
D
(
ON
)
0.5 1.4
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
|Y
fs
|
200
mS
V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage
V
SD
0.5
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25 pF
Reverse Transfer Capacitance
C
rss
5.0 pF
Turn-On Delay Time t
D(on)
2.1
ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 25, I
D
= 200mA
Turn-On Rise Time t
r
1.8
ns
Turn-Off Delay Time t
D(off)
14.4
ns
Turn-Off Fall Time t
f
8.4
ns
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10S, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN5L06WK
Document number: DS30928 Rev. 8 - 2
3 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN5L06W
K
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
-50
-25
0
25
50
75
100
125
150
0
I DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
D
,
1
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
D
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
V GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
P1-P3P4-P6

DMN5L06WK-7

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Buy DMN5L06WK-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Channel
Lifecycle:
New from this manufacturer.
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