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T810H-6G

P1-P3P4-P6P7-P9P10-P10
May 2009 Doc ID 15714 Rev 1 1/10
10
T810H
High temperature 8 A sensitive TRIACs
Features
■ Medium current TRIAC
■ Logic level sensitive TRIAC
■ 150 °C max. T
j
turn-off commutation
■ Clip bounding
■ RoHS (2002/95/EC) compliant packages
Applications
■ The T810H is designed for the control of AC
actuators in appliances and industrial systems.
■ The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through these sensitive gate
TRIACs.
Description
Specifically designed to operate at 150 °C, the
new 8 A T810H TRIACs provide an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electro-
mechanical solutions.
Based on ST logic level technology, they offer an
I
GT
lower than 10 mA and specified minimal
commutation and high noise immunity levels valid
up to the T
j
max.
Table 1. Device summary
Symbol Value Unit
I
T(RMS)
8A
V
DRM
/V
RRM
600 V
I
GT MAX
10 mA
A2
A1
G
A2
A2
A1
G
A2
A2
A1
G
D
2
PAK
T810H-6G
TO-220AB
T810H-6T
www.st.com
Characteristics T810H
2/10 Doc ID 15714 Rev 1
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (full sine wave) D
2
PAK, TO-220AB T
c
= 135 °C 8 A
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
F = 60 Hz t = 16.7 ms 84
A
F = 50 Hz t = 20 ms 80
I
²
tI
²
t Value for fusing t
p
= 10 ms 42 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 150 °C 50 A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25 °C
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 150 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 150 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
°C
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Min Max. Unit
I
GT
V
D
= 12 V R
L
= 33 Ω
I - II - III 1 10 mA
V
GT
I - II - III 1.0 V
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ I - II - III 0.15 V
I
H
(1)
I
T
= 100 mA 25 mA
I
L
I
G
= 1.2 I
GT
I - III 30
mA
II 35
dV/dt
(1)
V
D
= 67% V
DRM,
gate open, T
j
= 150 °C 75 V/µs
(dI/dt)c
(1)
Logic level, 0.1 V/µs, T
j
= 150 °C 11.4
A/ms
Logic level, 15 V/µs, T
j
= 150 °C 3.0
1. For both polarities of A2 referenced to A1.
T810H Characteristics
Doc ID 15714 Rev 1 3/10
Table 4. Static characteristics
Symbol Test conditions Value Unit
V
T
(1)
I
TM
= 11.3 A, t
p
= 380 µs T
j
= 25 °C MAX. 1.5 V
V
t0
(1)
Threshold voltage T
j
= 150 °C MAX. 0.80 V
R
d
(1)
Dynamic resistance T
j
= 150 °C MAX. 55.0 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C MAX. 5 µA
T
j
= 150 °C MAX. 3.1
mAV
D
/V
R
= 400 V (at peak mains voltage) T
j
= 150 °C MAX. 2.5
V
D
/V
R
= 200 V (at peak mains voltage) T
j
= 150 °C MAX. 2.0
1. for both polarities of A2 referenced to A1.
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC) D
2
PAK / TO-220AB 1.60
°C/W
R
th(j-a)
Junction to ambient
S = 1 cm
2
D
2
PA K 4 5
TO-220AB 60
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
0
1
2
3
4
5
6
7
8
9
10
012345678
P(W)
I
T(RMS)
(A)
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150
I
T(RMS)
(A)
T
C
(°C)
P1-P3P4-P6P7-P9P10-P10

T810H-6G

Mfr. #:
Buy T810H-6G
Manufacturer:
STMicroelectronics
Description:
Triacs High temperature 8 A Sensitive TRIACs
Lifecycle:
New from this manufacturer.
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