BSC320N20NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
36 A
T
C
=100 °C
24
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
144
Avalanche energy, single pulse
E
AS
I
D
=36 A, R
GS
=25 Ω
190 mJ
Reverse diode dv /dt dv /dt 10 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
125 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
2)
See figure 3
Value
1)
J-STD20 and JESD22
V
DS
200 V
R
DS(on),max
32
mΩ
I
D
36 A
Product Summary
Type
BSC320N20NS3 G
Package
PG-TDSON-8
Marking
320N20NS
Rev. 2.3 page 1 2011-05-20