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1PMT5931BT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 3
1 Publication Order Number:
1PMT5920B/D
1PMT5920B Series
3.2 Watt Plastic
Surface Mount
POWERMITE
®
Package
This complete new line of 3.2 Watt Zener Diodes are offered in
highly efficient micro miniature, space saving surface mount with its
unique heat sink design. The POWERMITE package has the same
thermal performance as the SMA while being 50% smaller in
footprint area and delivering one of the lowest height profiles
(1.1 mm) in the industry. Because of its small size, it is ideal for use
in cellular phones, portable devices, business machines and many
other industrial/consumer applications.
Features
• Zener Breakdown Voltage: 6.2 − 47 V
• DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C
• Low Leakage < 5 mA
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Low Profile − Maximum Height of 1.1 mm
• Integral Heat Sink/Locking Tabs
• Full Metallic Bottom Eliminates Flux Entrapment
• Small Footprint − Footprint Area of 8.45 mm
2
• Supplied in 12 mm Tape and Reel
T1 = 3,000 Units per Reel
T3 = 12,000 Units per Reel
• Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
• POWERMITE is JEDEC Registered as DO−216AA
• Cathode Indicated by Polarity Band
• Pb−Free Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
PLASTIC SURFACE MOUNT
3.2 WATT ZENER DIODES
6.2 − 47 VOLTS
Device Package Shipping
†
ORDERING INFORMATION
1PMT59xxBT1 POWERMITE 3,000/Tape&Ree
l
12
1: CATHODE
2: ANODE
POWERMITE
CASE 457
PLASTIC
1
2
MARKING DIAGRAM
1
CATHODE
2
ANODE
1PMT59xxBT3 POWERMITE 12,000/Tape&Ree
l
http://onsemi.com
Individual devices are listed on page 2 of this data sheet.
1PMT59xxBT1G POWERMITE
(Pb−Free)
3,000/Tape&Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1PMT59xxBT3G POWERMITE
(Pb−Free)
12,000/Tape&Ree
l
M = Date Code
xxB = Specific Device Code
(See Table on Page 2)
G = Pb−Free Package
xxBG
G
M
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
1PMT5920B Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
DC Power Dissipation @ T
A
= 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
°
R
q
JA
500
4.0
248
°mW
mW/°C
°C/W
Thermal Resistance, Junction−to−Lead (Anode)
R
q
Janode
35 °C/W
Maximum DC Power Dissipation (Note 2)
Thermal Resistance from Junction−to−Tab (Cathode)
°P
D
°
R
q
Jcathode
3.2
23
W
°C/W
Operating and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with recommended minimum pad size, PC board FR−4.
2. At Tab (Cathode) temperature, T
tab
= 75°C
ELECTRICAL CHARACTERISTICS (T
L
= 25°C unless
otherwise noted, V
F
= 1.5 V Max. @ I
F
= 200 mAdc for all types)
Symbol Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T
L
= 30°C unless otherwise noted, V
F
= 1.25 Volts @ 200 mA)
Device*
Device
Marking
Zener Voltage (Note 3)
I
ZT
I
R
@ V
R
V
R
Z
ZT
@ I
ZT
(Note 4)
Z
ZK
@ I
ZK
(Note 4)
I
ZK
V
Z
@ I
ZT
(Volts)
Min Nom Max (mA)
(mA)
(V)
(W) (W)
(mA)
1PMT5920BT1, T3,G 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0
1PMT5921BT1, T3,G 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0
1PMT5922BT1, T3,G 22B 7.12 7.5 7.88 50 5.0 6.0 3.0 400 0.5
1PMT5923BT1, T3,G 23B 7.79 8.2 8.61 45.7 5.0 6.5 3.5 400 0.5
1PMT5924BT1, T3,G 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5
1PMT5925BT1, T3,G 25B 9.5 10 10.5 37.5 5.0 8.0 4.5 500 0.25
1PMT5927BT1, T3,G 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25
1PMT5929BT1, T3,G 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25
1PMT5930BT1, T3,G 30B 15.2 16 16.8 23.4 1.0 12.2 10 600 0.25
1PMT5931BT1, T3,G 31B 17.1 18 18.9 20.8 1.0 13.7 12 650 0.25
1PMT5933BT1, T3,G 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25
1PMT5934BT1, T3,G 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25
1PMT5935BT1, T3,G 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25
1PMT5936BT1, T3,G 36B 28.5 30 31.5 12.5 1.0 22.8 28 750 0.25
1PMT5939BT1, T3,G 39B 37.05 39 40.95 9.6 1.0 29.7 45 900 0.25
1PMT5941BT1, T3,G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C.
4. Zener Impedance Derivation Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The
specified limits are for I
Z
(ac) = 0.1 I
Z
(dc) with the ac frequency = 60 Hz.
* The “G” suffix indicates Pb−Free package available.
1PMT5920B Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
7
5
3
2
Figure 1. Steady State Power Derating Figure 2. V
Z
to 10 Volts
25 50 75 100 125 175
3.5
2.5
2
1.5
1
0
T, TEMPERATURE (°C)
P , MAXIMUM POWER DISSIPATION (W)
D
0.1
56 910
V
Z
, ZENER VOLTAGE (VOLTS)
0.5
T
L
2 4 6 8 10 1
2
10
8
6
4
2
0
−2
−4
V
Z
, ZENER VOLTAGE (VOLTS)
V
Z
@ I
ZT
200
100
70
50
30
20
10
10 20 30 50 70 100 200
V
Z
, ZENER VOLTAGE (VOLTS)
V
Z
@ I
ZT
150
3
78 1
1
1
10
100
I
Z
, ZENER CURRENT (mA)
Figure 3. V
Z
= 12 thru 47 Volts
0 102030405060708090100
V
Z
, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
100
50
30
20
10
1
0.5
0.3
0.2
0.1
2
5
3
Figure 4. Zener Voltage − To 12 Volts
Figure 5. Zener Voltage − 14 To 47 Volts Figure 6. Effect of Zener Voltage
V
Z
, ZENER VOLTAGE (VOLTS)
5 7 10 20 30 50 70 10
0
200
100
70
50
30
20
10
Z , DYNAMIC IMPEDANCE (OHMS)
Z
I
Z(dc)
= 1mA
20 mA
i
Z(rms)
= 0.1 I
Z(dc)
10 mA
q
VZ
, TEMPERATURE COEFFICIENT (mV/
°
C)
q
VZ
, TEMPERATURE COEFFICIENT (mV/°C)
P1-P3P4-P6

1PMT5931BT1

Mfr. #:
Buy 1PMT5931BT1
Manufacturer:
ON Semiconductor
Description:
Zener Diodes 18V 3.2W Powermite
Lifecycle:
New from this manufacturer.
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