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MCH5541-TL-E

P1-P3P4-P5
MCH5541
No.8224-1/5
Applications
•
MOSFET gate drivers, relay drivers, lamp drivers, motor drivers.
Features
• Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.
• Ultrasmall package permitting applied sets to be small and slim.
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--30)40 V
Collector-to-Emitter Voltage V
CEO
(--30)30 V
Emitter-to-Base Voltage V
EBO
(--)5 V
Collector Current I
C
(--)700 mA
Collector Current (Pulse) I
CP
PW≤10µs (--)3 A
Collector Dissipation P
C
Mounted on a ceramic board (600mm
2
✕0.8m) 0.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=(--)30V, I
E
=0 (--)100 nA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0 (--)100 nA
DC Current Gain h
FE
V
CE
=(--)2V, I
C
=(--10)50mA (200)300 (500)800
Gain-Bandwidth Product f
T
V
CE
=(--)2V, I
C
=(--)50mA (520)540 MHz
Output Capacitance Cob V
CB
=(--)10V, f=1MHz (4.7)3.3 pF
Collector-to-Emitter Saturation Voltage V
CE
(sat) I
C
=(--)200mA, I
B
=(--)10mA (--110)85 (--220)190 mV
Base-to-Emitter Saturation Voltage V
BE
(sat) I
C
=(--)200mA, I
B
=(--)10mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V
(BR)CBO
I
C
=(--)10µA, I
E
=0 (--30)40 V
Collector-to-Emitter Breakdown Voltage V
(BR)CEO
I
C
=(--)1mA, R
BE
=∞ (--)30 V
Emitter-to-Base Breakdown Voltage V
(BR)EBO
I
E
=(--)10µA, I
C
=0 (--)5 V
Marking : E1 Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8224
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
21005EA TS IM TB-00001171
MCH5541
PNP / NPN Epitaxial Planar Silicon Transistor
Push-Pull Circuit Applications
MCH5541
No.8224-2/5
Continued from preceding page.
Ratings
Parameter Symbol Conditions
min typ max
Unit
Turn-ON Time ton See specified Test Circuit. 35 ns
Storage Time t
stg
See specified Test Circuit. (125)255 ns
Fall Time t
f
See specified Test Circuit (25)40 ns
Package Dimensions Electrical Connection
unit : mm
2239
Switching Time Test Circuit
5
2
4
13
Top view
1 : Base1
2 : Emitter Common
3 : Base2
4 : Collector2
5 : Collector1
[PNP] [NPN]
0
0
--200
--100
I
C
--
V
CE
IT05049
--400
--300
--600
--500
--700
--200
--600--400
--800
--1000
--100
--500--300
--700
--900
I
B
=0
--500µA
--1mA
--2mA
--5mA
--3mA
--7mA
--10mA
--15mA
--40mA
--50mA
--30mA
--20mA
--25mA
Collector-to-Emitter Voltage, V
CE
-- mV
Collector Current, I
C
-- mA
0
0
500
400
300
700
600
200
200
100
500 1000
800
900100 300 400 600 700
I
C
-- V
CE
IT05082
I
B
=0
200µA
400µA
1mA
2mA
3mA
5mA
7mA
10mA
50mA
15mA
30mA
20mA
Collector-to-Emitter Voltage, V
CE
-- mV
Collector Current, I
C
-- mA
1 : Base1
2 : Emitter Common
3 : Base2
4 : Collector2
5 : Collector1
SANYO : MCPH5
0.250.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
132
4
5
123
54
(Bottom view)
(Top view)
V
R
R
B
V
CC
=12VV
BE
= --5V
+
+
50Ω
INPUT
OUTPUT
R
L
220µF 470µF
PW=20µs
I
B1
D.C.≤1%
I
B2
20I
B1
= --20I
B2
=I
C
=300mA
For PNP, minus sign is omitted.
MCH5541
No.8224-3/5
[PNP] [NPN]
[PNP] [NPN]
[PNP] [NPN]
IT05051
3
100
h
FE
--
I
C
--1.0
2
3
5
7
--10
2
3
5
7
2
3
5
7
--100 --1000
2
3
5
1000
7
5
7
V
CE
= --2V
Ta=75°C
25°C
--25
°
C
IT05054
--1.0
V
CE
(sat) -- I
C
23 57
--10
23 57 23 57
--100
--1000
--1000
--100
2
3
5
7
2
3
5
7
--10
Ta=75
°
C
--25
°
C
25°C
I
C
/ I
B
=20
Collector Current, I
C
-- mA
DC Current Gain, h
FE
Collector Current, I
C
-- mA
Collector-to-Emitter
Saturation Voltage, V
CE
(sat) -- mV
IT05055
V
CE
(sat) -- I
C
--1.0
23 57
--10
23 57 23 57
--100
--1000
--10
3
--1000
2
2
3
5
7
2
3
5
7
--100
Ta=75°C
--25°C
25°C
I
C
/ I
B
=50
Collector Current, I
C
-- mA
Collector-to-Emitter
Saturation Voltage, V
CE
(sat) -- mV
V
CE
(sat)
-- I
C
IT05086
10
100
1000
7
5
3
2
7
5
3
2
1.0
23
5
10 100 1000
7
23
5
7
23
5
7
I
C
/ I
B
=50
75
°
C
--25°C
Ta=25°C
Collector-to-Emitter
Saturation Voltage, V
CE
(sat) -- mV
Collector Current, I
C
-- mA
1.0 10 100 1000
3
2
57 3
2
57 3
2
57
1000
100
2
3
5
7
h
FE
-- I
C
IT05084
V
CE
(sat)
-- I
C
IT05085
Ta=75°C
--25
°C
25°C
V
CE
=2V
2
3
5
7
2
3
5
7
10
1.0
100
2
3
5
7
1000
1.0
23 5
10 100 1000
7 2357 2357
75°C
--25°C
Ta=25°C
I
C
/ I
B
=20
Collector Current, I
C
-- mA
DC Current Gain, h
FE
Collector Current, I
C
-- mA
Collector-to-Emitter
Saturation Voltage, V
CE
(sat) -- mV
[PNP] [NPN]
IT05050
0
0
I
C
--
V
BE
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
--200
--800
--500
--700
--400
--300
--600
--100
Ta=75°C
25°C
--25°C
V
CE
= --2V
Base-to-Emitter Voltage, V
BE
-- V
Collector Current, I
C
-- mA
0
300
400
200
800
700
600
500
100
0 0.2 0.4 0.6 0.8 1.0
I
C
-- V
BE
IT05083
Ta=75
°
C
--25
°
C
25°C
V
CE
=2V
Base-to-Emitter Voltage, V
BE
-- V
Collector Current, I
C
-- mA
P1-P3P4-P5

MCH5541-TL-E

Mfr. #:
Buy MCH5541-TL-E
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT BIP PNP+NPN 0.7A 30V
Lifecycle:
New from this manufacturer.
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