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Figure5: Extended Mode Register
0 PASR
Address Bus
Extended Mode Register (Ex)
0 1 2 3 4 5 6 10 9 8 7 11
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11
E2 E1 E0 Self Refresh Coverage
0 0 0 All Banks
0 0 1 Two Banks (BA1=0)
0 1 0 One Bank (BA1=BA0=0)
0 1 1 Reserved
1 0 0 Reserved
1 0 1 Half of One Bank (BA1=BA0=0, Row Address MSB=0)
1 1 0 Quarter of One Bank (BA1=BA0=0, Row Address 2 MSB=0)
1 1 1 Reserved
Note: E13(BA1) must be set to “1” and E12(BA0) must be set to “0” to select Extended Mode Register (vs. the base Mode
Register)
E6 E5 Driver Strength
0 0 Full Strength
0 1 1/2 Strength
1 0 1/4 Strength
1 1 1/8 Strength
0
0 0 0 DS
BA0
BA1
0
12
13
1
0
0
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In general, this 128Mb SDRAM (2M x 16Bits x 4banks) is a multi-bank DRAM that operates at 3.3V/2.5V/1.8V and includes a
synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 33,554,432-bit banks is
organized as 4,096 rows by 512 columns by 16-bits
Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed
by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and
row to be accessed (BA0-BA1 select the bank, A0-A11 select the row). The address bits (BA0-BA1 select the bank, A0-A8 select the
column) registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.
Prior to normal operation, the SDRAM must be initialized. The following sections provide detailed information covering device
initialization,
register definition, command descriptions and device operation.
Power up and Initialization
SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in
undefined operation. Once power is applied to VDD and VDDQ(simultaneously) and the clock is stable(stable clock is defined as a
signal cycling within timing constraints specified for the clock pin), the SDRAM requires a 100µs delay prior to issuing any command
other than a COMMAND INHIBIT or NOP. CKE must be held high during the entire initialization period until the PRECHARGE command
has been issued. Starting at some point during this 100µs period and continuing at least through the end of this period, COMMAND
INHIBIT or NOP commands should be applied.
Once the 100µs delay has been satisfied with at least one COMMAND INHIBIT or NOP command having been applied, a PRECHARGE
command should be applied. All banks must then be precharged, thereby placing the device in the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles must be performed. After the AUTO REFRESH cycles are complete, the SDRAM is
ready for mode register programming. Because the mode register will power up in an unknown state,
it should be loaded prior to
applying any operational command. And a extended mode register set command will be issued to program specific mode of self
refresh operation(PASR). The following these cycles, the Mobile SDRAM is ready for normal operation.
Register Definition
Mode Register
The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst
length, a burst type, a CAS latency, an operating mode and a write burst mode. The mode register is programmed via the LOAD
MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power.
Mode register bits M0-M2 specify the burst length, M3 specifies the type of burst (sequential or interleaved), M4-M6 specify the CAS
latency, M7 and M8 specify the operating mode, M9 specifies the write burst mode, and M10-M11 should be set to zero. M12 and M13
should be set to zero to prevent extended mode register.
The mode register must be loaded when all banks are idle, and the controller must wait the specified time before initiating the
subsequent operation. Violating either of these requirements will result in unspecified operation.
Functional Description
Extended Mode Register
The Extended Mode Register controls the functions beyond those controlled by the Mode Register. These additional functions are
special features of the BATRAM device. They include Partial Array Self Refresh (PASR) and Driver Strength (DS).
The Extended Mode Register is programmed via the Mode Register Set command and retains the stored information until it is
programmed again or the device loses power.
The Extended Mode Register must be programmed with E7 through E11 set to “0”. Also, E12(BA0) must be set to “0”, and E13(BA1)
must be set to “1”. The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time before initiating any subsequent operation. Violating either of these requirements results in
unspecified operation.
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Burst Length
Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in Figure 1. The burst
length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst
lengths of 1, 2, 4 or 8 locations are available for both the sequential and the interleaved burst types, and a full-page burst is available
for the sequential type. The full-page burst is used in conjunction with the BURST TERMINATE command to generate arbitrary burst
lengths.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a READ or WRITE
command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within
this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A1-A8 when
the burst length is set to two; by A2-A8 when the burst length is set to four; and by A3-A8 when the burst length is set to eight. The
remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Full-page bursts wrap within
the page if the boundary is reached.
Bank(Row) Active
The Bank Active command is used to activate a row in a specified bank of the device. This command is initiated by activating CS, RAS and
deasserting CAS, WE at the positive edge of the clock. The value on the BA0-BA1 selects the bank, and the value on the A0-A11 selects
the row.
This row remains active for column access until a precharge command is issued to that bank. Read and write operations can only be
initiated on this activated bank after the minimum tRCD time is passed from the activate command.
Read
The READ command is used to initiate the burst read of data. This command is initiated by activating CS, CAS, and deasserting WE, RAS at
the positive edge of the clock. BA0-BA1 input select the bank, A0-A8 address inputs select the starting column location. The value on input
A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the
end of the READ burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses. The length of burst and the
CAS latency will be determined by the values programmed during the MRS command.
Write
The WRITE command is used to initiate the burst write of data. This command is initiated by activating CS, CAS, WE and deasserting RAS
at the positive edge of the clock. BA0-BA1 input select the bank, A0-A8 address inputs select the starting column location. The value on
input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at
the end of the WRITE burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses.

IS42SM16800G-6BLI

Mfr. #:
Manufacturer:
Description:
DRAM 128M 8Mx16 166Mhz 3.3V Mobile SDR
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