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TSM060N03CP ROG

P1-P3P4-P5
TSM060N03CP
30V N-Channel Power MOSFET
1/5 Version: A14
TO-252
(DPAK)
Key Parameter Performance
Parameter
Value
Unit
V
DS
30
V
V
GS
= 10V
6
mΩ
V
GS
= 4.5V
9
Q
g
11.1
nC
Ordering Information
Part No.
Package
Packing
TSM060N03CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Absolute Maximum Ratings (T
C
=25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
T
C
=25ºC
I
D
80
A
T
C
=100ºC
51
A
Pulsed Drain Current
(Note 1)
I
DM
320
A
Single Pulse Avalanche Energy
(Note 2)
E
AS
88
mJ
Single Pulse Avalanche Current
(Note 2)
I
AS
42
A
Total Power Dissipation
@ T
C
=25
o
C
P
D
54
W
Derate above T
C
=25
o
C
0.43
W/ºC
Operating Junction Temperature
T
J
150
ºC
Storage Temperature Range
T
STG
-55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
R
ӨJC
2.3
o
C/W
Thermal Resistance - Junction to Ambient
R
ӨJA
62
o
C/W
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET
TSM060N03CP
30V N-Channel Power MOSFET
2/5 Version: A14
Electrical Specifications (T
C
=25
o
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
BV
DSS
30
--
--
V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 20A
R
DS(ON)
--
4.8
6
mΩ
V
GS
= 4.5V, I
D
= 10A
--
6.5
9
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
V
GS(TH)
1
1.6
2.5
V
Zero Gate Voltage Drain Current
V
DS
= 30V, V
GS
= 0V
I
DSS
--
--
1
µA
V
DS
= 24V, T
J
= 125ºC
--
--
10
Gate Body Leakage
V
GS
= ±20V, V
DS
= 0V
I
GSS
--
--
±100
nA
Forward Transconductance
V
DS
= 10V, I
D
= 10A
g
fs
--
18
--
S
Dynamic
Total Gate Charge
(Note 3,4)
V
DS
= 15V, I
D
= 20A,
V
GS
= 4.5V
Q
g
--
11.1
--
nC
Gate-Source Charge
(Note 3,4)
Q
gs
--
1.85
--
Gate-Drain Charge
(Note 3,4)
Q
gd
--
6.8
--
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
C
iss
--
1160
--
pF
Output Capacitance
C
oss
--
200
--
Reverse Transfer Capacitance
C
rss
--
180
--
Gate Resistance
V
GS
=0V, V
DS
=0V, f=1MHz
R
g
--
2.5
--
Ω
Switching
Turn-On Delay Time
(Note 3,4)
V
DD
=15V , V
GS
=10V ,
R
G
=3.3, I
D
=-15A
t
d(on)
--
7.5
--
ns
Turn-On Rise Time
(Note 3,4)
t
r
--
14.5
--
Turn-Off Delay Time
(Note 3,4)
t
d(off)
--
35.2
--
Turn-Off Fall Time
(Note 3,4)
t
f
--
9.6
--
Source-Drain Diode Ratings and Characteristic
Continuous Drain-Source Diode
V
G
=V
D
=0V , Force Current
I
S
--
--
80
A
Pulse Drain-Source Diode
I
SM
--
--
320
A
Diode-Source Forward Voltage
V
GS
= 0V, I
S
= 1A
V
SD
--
--
1
V
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=42A, R
G
=25, Starting T
J
=25
o
C
3. The data tested by pulsed , pulse width ≤300µs, duty cycle ≤2%
4. Essentially independent of operating temperature.
TSM060N03CP
30V N-Channel Power MOSFET
3/5 Version: A14
Electrical Characteristics Curve
Continuous Drain Current vs. Tc
Normalized RDSON vs. T
J
Normalized V
th
vs. T
J
Gate Charge Waveform
Normalized Transient Impedance
Maximum Safe Operation Area
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (
o
C)
T
J
, Junction Temperature (
o
C)
Normalized On Resistance
T
J
, Junction Temperature (
o
C)
Normalized Gate Threshold Voltage
(V)
Qg , Gate Charge (nC)
V
GS
,
Gate to Source Voltage (V)
Normalized Thermal Response (R
θJC
)
Square Wave Pulse Duration
(s)
I
D
,
Continuous Drain Current
(A)
V
DS
, Drain to Source Voltage
(V)
P1-P3P4-P5

TSM060N03CP ROG

Mfr. #:
Buy TSM060N03CP ROG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 30V 80Amp N channel Power Mosfet
Lifecycle:
New from this manufacturer.
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