MPS5179RLRAG

© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
MPS5179/D
MPS5179
Preferred Device
High Frequency Transistor
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
12 Vdc
CollectorBase Voltage V
CBO
20 Vdc
EmitterBase Voltage V
EBO
2.5 Vdc
Collector Current − Continuous I
C
50 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
200
1.14
W
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
300
1.71
W
mW/°C
Storage Temperature Range T
stg
55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MPS5179RLRA TO−92 2000/Tape & Reel
MPS5179RLRAG TO−92
(Pb−Free)
2000/Tape & Reel
Device Package Shipping
MPS5179 TO−92 5000 Units/Box
MPS5179G TO−92
(Pb−Free)
5000 Units/Box
MPS5179 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
Preferred devices are recommended choices for future use
and best overall value.
ORDERING INFORMATION
TO−92
CASE 29−11
STYLE 1
1
2
3
MARKING
DIAGRAM
MPS
5179
AYWW G
G
COLLECTOR
3
2
BASE
1
EMITTER
MPS5179RLRP TO−92 2000/Tape & Ammo
MPS5179RLRPG TO−92
(Pb−Free)
2000/Tape & Ammo
MPS5179
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(I
C
= 3.0 mAdc, I
B
= 0)
V
CEO(sus)
12 Vdc
CollectorBase Breakdown Voltage
(I
C
= 0.001 mAdc, I
E
= 0)
V
(BR)CBO
20 Vdc
EmitterBase Breakdown Voltage
(I
E
= 0.01 mAdc, I
C
= 0)
V
(BR)EBO
2.5 Vdc
Collector Cutoff Current
(V
CB
= 15 Vdc, I
E
= 0)
(V
CB
= 15 Vdc, I
E
= 0, T
A
= 150°C)
I
CBO
0.02
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 3.0 mAdc, V
CE
= 1.0 Vdc)
h
FE
25 250
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
CE(sat)
0.4 Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
BE(sat)
1.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (Note 1)
(I
C
= 5.0 mAdc, V
CE
= 6.0 Vdc, f = 100 MHz)
f
T
900 2000 MHz
Collector−Base Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 to 1.0 MHz)
C
cb
1.0 pF
Small Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 6.0 Vdc, f = 1.0 kHz)
h
fe
25 300
1. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
MPS5179
http://onsemi.com
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
1
TO−92 (TO−226)
CASE 29−11
ISSUE AL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
MPS5179/D
LITERATURE FULFILLMENT:
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Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.

MPS5179RLRAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
RF TRANS NPN 12V 2GHZ TO92-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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