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VSMG2020X01

P1-P3P4-P6P7-P8
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Jan-13
1
Document Number: 85194
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH
DESCRIPTION
VSMG2000X01 series are infrared, 850 nm emitting diodes
in GaAlAs (DH) technology with high radiant power and high
speed, molded in clear, untinted plastic packages (with lens)
for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• Peak wavelength:
p
= 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2000X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• IR-illumination (CCTV)
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
VSMG2000X01 VSMG2020X01
21725-2
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
p
(nm) t
r
(ns)
VSMG2000X01 40 ± 12 850 20
VSMG2020X01 40 ± 12 850 20
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMG2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMG2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Jan-13
2
Document Number: 85194
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
170 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. figure 9, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21341
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21342
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.25 1.45 1.7 V
I
F
= 1 A, t
p
= 100 μs V
F
2.3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
I
F
= 100 mA TK
VF
- 1.1 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
20 40 60 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
350 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
e
40 mW
Temperature coefficient of
e
I
F
= 100 mA TK
e
- 0.35 %/K
Angle of half intensity ± 12 deg
Peak wavelength I
F
= 30 mA
p
830 850 870 nm
Spectral bandwidth I
F
= 30 mA  35 nm
Temperature coefficient of
p
I
F
= 30 mA TK
p
0.25 nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
20 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
20 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
23 MHz
Virtual source diameter d 1.5 mm
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Jan-13
3
Document Number: 85194
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
18873_1
I
F
- Forward Current (mA)
1000
100
10
1
V
F
- Forward Voltage (V)
02413
t
p
= 100 µs
t
p
/T = 0.001
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
T
amb
- Ambient Temperature (°C)
V
F, rel
- Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
1
10
100
1000
0.001 0.1 1
I
F
- Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
1
0.01
t
p
= 100 µs
800 850
λ- Wavelength (nm)
900
16972
0
0.25
0.5
0.75
1.0
1.25
Φ
e, rel
- Relative Radiant Power
0.4 0.2 0
I
e rel
- Relative Radiant Intensity
21550
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P6P7-P8

VSMG2020X01

Mfr. #:
Buy VSMG2020X01
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters - High Power 850nm 40mW/Sr 20ns Gullwing
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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