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J110G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 6
1 Publication Order Number:
J110/D
J110
JFET − General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for general purpose audio amplifiers, analog
switches and choppers.
Features
• N−Channel for Higher Gain
• Drain and Source Interchangeable
• High AC Input Impedance
• High DC Input Resistance
• Low R
DS(on)
< 18 W
• Fast Switching t
d(on)
+ t
r
= 8.0 ns (Typ)
• Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ)
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Gate−Source Voltage VG
S
−25 Vdc
Drain−Gate Voltage V
DG
−25 Vdc
Gate Current I
G
10 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
310
2.82
mW
mW/°C
Operating Junction Temp Range T
J
135 °C
Storage Temperature Range T
stg
−65 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
J110 TO−92
CASE 29
TO−92 (TO−226)
STYLE 5
1000 Units / Box
3
2
1
J110RLRA TO−92 2000 / Tape & Reel
MARKING
DIAGRAM
J110
AYWW G
G
1 DRAIN
2 SOURCE
3
GATE
http://onsemi.com
J110 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
J110RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
J110G TO−92
(Pb−Free)
1000 Units / Box
†
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
J110
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
STATIC CHARACTERISTICS
Gate−Source Breakdown Voltage (I
G
= −1.0 mAdc)
V
(BR)GSS
−25 − Vdc
Gate Reverse Current (V
GS
= −15 Vdc, V
DS
= 0)
(V
GS
= −15 Vdc, V
DS
= 0, T
A
= 100°C)
I
GSS
−
−
−3.0
−200
nAdc
Gate−Source Cutoff Voltage (V
DS
= 5.0 Vdc, I
D
= 1.0 mAdc)
V
GS(off)
−0.5 −4.0 Vdc
Drain Source On−Resistance (V
DS
v 0.1 V, V
GS
= 0 V) R
DS(on)
− 18
W
Zero−Gate−Voltage Drain Current (Note 1) (V
DS
= 15 Vdc) I
DSS
10 − mAdc
DYNAMIC CHARACTERISTICS
Drain−Gate and Source−Gate On−Capacitance
(V
DS
= V
GS
= 0, f = 1.0 MHz)
C
dg(on)
+
C
sg(on)
− 85 pF
Drain−Gate Off−Capacitance (V
GS
= −10 Vdc, f = 1.0 MHz) C
dg(off)
− 15 pF
Source−Gate Off−Capacitance (V
GS
= −10 Vdc, f = 1.0 MHz) C
sg(off)
− 15 pF
1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
0 −20
40
−4
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
C
iss
, INPUT CAPACITANCE (pF)
0
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance
versus Gate−Source Voltage
Figure 2. Common Source Reverse Feedback
Capacitance versus Gate−Source Voltage
C
rss
, FEEDBACK CAPACITANCE (pF)
100
0 −20−8
20
V
DS
= 0 V
60
V
DS
= 0 V
0
100
40
−12−12 −16 −4 −8 −16
80
80
20
60
5 V
10 V
5 V
10 V
0−8
8
−2−1
V
GS(off)
, GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−SOURCE
ON−RESISTANCE (OHMS)
0
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus Gate−Source
Cutoff Voltage
Figure 4. Output Characteristic
V
GS(off)
= −2.0 V
I
D
, DRAIN CURRENT (mA)
28 2
0
−3
4
12
V
GS
= 0 V
16
0
100
40
12−4 −5 −6 −7 4 6 10 14 16 18
80
20
60
V
GS(off)
: V
DS
= 5 V
V
GS(off)
: I
D
= 1.0 mA
R
DS(on)
: V
DS
≤ 0.1 V
R
DS(on)
: V
GS
= 0 V
0
90
30
70
10
50
−0.25 V
−0.5 V
−0.75 V
−1.25 V
−1 V
J110
http://onsemi.com
3
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristic
V
GS(off)
= −3.0 V
I
D
, DRAIN CURRENT (mA)
28 20
V
GS
= 0 V
0
200
80
124 6 10 14 16 18
160
40
120
0
180
60
140
20
100
−0.5 V
−1 V
−1.5 V
−2.5 V
−2 V
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 6. Output Characteristic
V
GS(off)
= −4.0 V
I
D
, DRAIN CURRENT (mA)
28 2
0
V
GS
= 0 V
0
300
120
124 6 10 14 16 18
240
60
180
0
270
90
210
30
150
−1 V
−2 V
−0.5 V
−3 V
−2.5 V
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 7. Output Characteristic
V
GS(off)
= −5.0 V
I
D
, DRAIN CURRENT (mA)
28 20
V
GS
= 0 V
0
400
160
124 6 10 14 16 18
320
80
240
0
360
120
280
40
200
−0.5 V
−1 V
−1.5 V
−1.5 V
−2 V
−2.5 V
−3 V
−3.5 V
P1-P3P4-P4

J110G

Mfr. #:
Buy J110G
Manufacturer:
ON Semiconductor
Description:
JFET 25V 10mA
Lifecycle:
New from this manufacturer.
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