MUR8L60
Taiwan Semiconductor
CREAT BY ART
- Low conduction loss for high efficiency
- Excellent high temperature stability
- High forward surge capability
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meets JESD 201 class 2 whisker test
SYMBOL UNIT
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
R
θJC
R
θJA
T
J
°C
T
STG
°C
Document Number: DS_D0000088 Version: A15
T
J
=25°C
I
R
μA
T
J
=125°C
200
5
Maximum DC Blocking Voltage 600
420
Storage temperature range - 55 to +175
Non-repetitive peak forward surge current
8.3ms single sine-wave
I
FSM
100
65
Maximum reverse current @ rated V
R
Note 1: Pulse test with PW=300μs, 1% duty cycle
2.5
Operating junction temperature range - 55 to +175
Maximum reverse recovery time
t
rr
I
F
=0.5A, I
R
=1A, I
RR
=0.25A
ns
Case: TO-220AC
Polarity: As marked
Mounting torque: 0.56 Nm maximum
A
Maximum instantaneous forward voltage (Note 1)
I
F
= 8 A
V
F
1.3 V
PARAMETER MUR8L60
8A, 600V Glass Passivated Low VF Super Fast Rectifier
FEATURES
TO-220AC
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
MECHANICAL DATA
MUR8L60 is especially suited as boost diode in
discontinuous mode power factor correction or as a free
wheeling diode in other power supply applications.
Typical thermal resistance
7.0
°C/W
Weight: 1.85g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
8
Maximum repetitive peak reverse voltage 600
Maximum average forward rectified current
Maximum RMS Voltage
1
2
