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MS2361

P1-P3
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2361
DESCRIPTION:DESCRIPTION:
The MS2361 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME and TACAN. The MS2361 is packaged in
the 0.280” input matched stripline package resulting in improved
broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUABSOLUTE MAXIMUM RATINGS M RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 65 V
V
CES
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Device Current 5.5 A
P
DISS
Power Dissipation 218.7 W
T
J
Junction Temperature +200
°°C
T
STG
Storage Temperature -65 to +150
°°C
Thermal DataThermal Data
R
TH(J-C)
Junction-case Thermal Resistance 0.8
°°C/W
FeaturesFeatures
• DESIGNED FOR HIGH POWER PULSED IFF, DME,
TACAN, APPLICATIONS
• 80 WATTS (typ.) IFF 1030 – 1090 MHz
• 75 WATTS (min.) DME 1025 – 1150 MHz
• 50 WATTS (typ.) TACAN 960 – 1215 MHz
• 7.6 dB MIN. GAIN
• REFRACTORY GOLD METALLIZATION
• EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
• INFINITE LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• INPUT MATCHED, COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2361
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
BV
CBO
I
C
= 10mA I
E
= 0mA 65 --- --- V
BV
CES
I
C
= 25mA V
BE
= 0V 65 --- --- V
BV
EBO
I
E
= 10mA I
C
= 0mA 3.5 --- --- V
I
CES
V
CE
= 50V I
E
= 0mA --- --- 5 mA
h
FE
V
CE
= 5V I
C
= 100mA 10 --- --- ---
DYNAMICDYNAMIC
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
P
OUT
f =1025 - 1150 MHz P
IN
= 13.0W V
CE
= 50V 75 --- --- W
G
P
f =1025 - 1150 MHz P
IN
= 13.0W V
CE
= 50V 7.6 --- --- dB
Note: Pulse Width = 10us, Duty Cycle = 1%
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific application assistance.
IMPEDANCE DATAIMPEDANCE DATA
FREQ
Z
IN
(ΩΩ) Z
CL
(ΩΩ)
960 MHz 2.5 + j 13.0 4.6 + j 5.5
1030 MHz 5.2 + j 15.0 5.0 + j 5.5
1090 MHz 16.3 + j 15.0 4.8 + j 5.5
1150 MHz 14.7 + j 2.5 4.7 – j 7.0
1215 MHz 7.6 + j 0.5 4.7 – j 5.0
P
IN
= 13W
V
CC
= 50V
Pulse Width = 10uSec
Duty Cycle = 1%
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2361
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
P1-P3

MS2361

Mfr. #:
Buy MS2361
Manufacturer:
Microchip / Microsemi
Description:
RF TRANS NPN 65V 1.15GHZ M115
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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