BGU7031 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 7 September 2010 3 of 10
NXP Semiconductors
BGU7031
1 GHz wideband low-noise amplifier
5. Limiting values
[1] T
sp
is the temperature at the solder point of the ground lead.
6. Thermal characteristics
7. Characteristics
[1] The fundamental frequency (f
1
) lies between 40 MHz and 1000 MHz. The intermodulation product (IM3) is
2 × f
2
− f
1
, where f
2
=f
1
± 1 MHz. Input power P
i
= −10 dBm.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled −0.6 5.25 V
I
CC(tot)
total supply current configurable with external resistor - 60 mA
P
tot
total power dissipation T
sp
≤ 100 °C
[1]
- 250 mW
P
i
input power single tone - 10 dBm
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −10 +70 °C
V
ESD
electrostatic discharge
voltage
Human Body Model (HBM);
according to JEDEC standard
22-A114E
2- kV
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 240 K/W
Table 7. Characteristics
T
amb
= 25
°
C; typical values at V
CC
= 5 V; Z
S
=Z
L
=75
Ω
; R
bias
= 43
Ω
; 40 MHz
≤
f
1
≤
1000 MHz.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage RF input AC coupled 4.75 5.0 5.25 V
I
CC(tot)
total supply current - 43 - mA
|s
21
|
2
insertion power gain - 10 dB
SL
sl
slope straight line - −1- dB
FL flatness of frequency response - −0.2 - dB
NF noise figure - 4.5 - dB
RL
in
input return loss - 18 - dB
RL
out
output return loss - 12 - dB
P
L(1dB)
output power at 1 dB gain
compression
1GHz - 14 - dBm
IP3
O
output third-order intercept point
[1]
-29-dBm
