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NSS40301MDR2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 1
1 Publication Order Number:
NSS40301MD/D
NSS40301MDR2G
Dual Matched 40 V, 6.0 A,
Low V
CE(sat)
NPN Transistor
These transistors are part of the ON Semiconductor e
2
PowerEdge
family of Low V
CE(sat)
transistors. They are assembled to create a pair
of devices highly matched in all parameters, including ultra low
saturation voltage V
CE(sat)
, high current gain and Base/Emitter turn on
voltage.
Typical applications are current mirrors, differential amplifiers,
DC−DC converters and power management in portable and battery
powered products such as cellular and cordless phones, PDAs,
computers, printers, digital cameras and MP3 players. Other
applications are low voltage motor controls in mass storage products
such as disc drives and tape drives. In the automotive industry they can
be used in air bag deployment and in the instrument cluster. The high
current gain allows e
2
PowerEdge devices to be driven directly from
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
Features
• Current Gain Matching to 10%
• Base Emitter Voltage Matched to 2 mV
• This is a Pb−Free Device
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
40 Vdc
Collector-Base Voltage V
CBO
40 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
3.0 A
Collector Current − Peak I
CM
6.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device Package Shipping
†
ORDERING INFORMATION
NSS40301MDR2G SOIC−8
(Pb−Free)
2500 /
Tape & Reel
DEVICE MARKING
SOIC−8
CASE 751
STYLE 16
http://onsemi.com
40 VOLTS
6.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
44 mW
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
COLLECTOR
7,8
2
BASE
1
EMITTER
COLLECTOR
5,6
4
BASE
3
EMITTER
1
8
N40301
AYWWG
G
1
8
N40301 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
NSS40301MDR2G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
SINGLE HEATED
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
576
4.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JA
217 °C/W
Total Device Dissipation (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
676
5.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
185 °C/W
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
653
5.2
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JA
191 °C/W
Total Device Dissipation (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
783
6.3
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
160 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ 10 mm
2
, 1 oz. copper traces, still air.
2. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
3. Dual heated values assume total power is the sum of two equally powered devices.
NSS40301MDR2G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
40 − −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
40 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − −
Vdc
Collector Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
I
CBO
− − 0.1
mAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc)
I
EBO
− − 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 10 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V) (Note 5)
h
FE
h
FE(1)/
h
FE(2)
200
200
180
180
0.9
400
350
340
320
0.99
−
−
−
−
−
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= 0.1 A, I
B
= 0.010 A)
(I
C
= 1.0 A, I
B
= 0.100 A)
(I
C
= 1.0 A, I
B
= 0.010 A)
(I
C
= 2.0 A, I
B
= 0.200 A)
V
CE(sat)
−
−
−
−
0.008
0.044
0.080
0.082
0.011
0.060
0.115
0.115
V
Base −Emitter Saturation Voltage (Note 4)
(I
C
= 1.0 A, I
B
= 0.01 A)
V
BE(sat)
− 0.780 0.900
V
Base −Emitter Turn−on Voltage (Note 4)
(I
C
= 0.1 A, V
CE
= 2.0 V)
(I
C
= 0.1 A, V
CE
= 2.0 V) (Note 6)
V
BE(on)
V
BE(1)
−
V
BE(2)
−
−
0.650
0.3
0.750
2.0
V
mV
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
100 − −
MHz
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz) Cibo − 320 450 pF
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz) Cobo − 40 50 pF
SWITCHING CHARACTERISTICS
Delay (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
d
− − 100 ns
Rise (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
r
− − 100 ns
Storage (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
s
− − 780 ns
Fall (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
f
− − 110 ns
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. h
FE(1)
/h
FE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
FE
is used as numerator.
6. V
BE(1)
− V
BE(2)
is the absolute difference of one transistor compared to the other transistor within the same package.
P1-P3P4-P6

NSS40301MDR2G

Mfr. #:
Buy NSS40301MDR2G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT MATCHED LO VCE(SAT) SOIC8
Lifecycle:
New from this manufacturer.
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