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Fast Recovery Diode
RF101L4S
Applications Dimensions (Unit : mm)
General rectification
Features
1)Small power mold type. (PMDS)
2)Ultra low V
F
3)Ultra high switching speed
4)Low switching loss
Construction
Silicon epitaxial planar Structure
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
V
RM
V
V
R
V
Io A
I
FSM
A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage
V
F
- - 1.25 V I
F
=1.0A
I
R
--10μAV
R
=400V
Reverse recovery time
trr
- - 25 ns
I
F
=0.5A,I
R
=1A,Irr=0.25*I
R
Reverse current
Land size figure (Unit : mm)
Storage temperature
55 to 150
(*1)Mounted on epoxy board. 180°Half sine wave
Parameter
Forward current surge peak (60Hz・1cyc) 25
Junction temperature 150
Reverse voltage (DC) 400
Average rectified forward current (*1) 1
Parameter Limits
Reverse voltage (repetitive) 400
PMDS
2.0
4.2
2.0
4.0±0.12.9±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
5.5±0.05
1.75±0.1
12±0.2
φ1.55
9.5±0.1
0.3
5.3±0.1
0.05
2.8MAX
ROHM : PMDS
JEDEC : SOD-106
①
Manufacture date
②
① ②
66
0.1±0.02
0.1
2.6±0.2
2.0±0.2
5.0±0.3
1.2±0.3
4.5±0.2
1.5±0.2
88
1/3 2011.06 - Rev.B
