FDS6685

October 2001
2001 Fairchild Semiconductor Corporation FDS6685 Rev D(W)
FDS6685
30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V 25V).
Applications
Power management
Load switch
Battery protection
Features
8.8 A, 30 V R
DS(ON)
= 20 m @ V
GS
= 10 V
R
DS(ON)
= 35 m @ V
GS
= 4.5 V
Low gate charge (17nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –30 V
V
GSS
Gate-Source Voltage ±25 V
I
D
Drain Current Continuous (Note 1a) 8.8 A
Pulsed –50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range 55 to +175 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6685 FDS6685 13’’ 12mm 2500 units
FDS6685
FDS6685 Rev D(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA –30 V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C –21 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V –1 µA
I
GSSF
GateBody Leakage, Forward V
GS
= 25 V, V
DS
= 0 V 100 nA
I
GSSR
GateBody Leakage, Reverse V
GS
= 25 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA –1 1.7 –3 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
5 mV/°C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 8.8 A
V
GS
= 4.5 V, I
D
= 6.7 A
V
GS
= 10 V, I
D
= 8.8A, T
J
=125°C
15
22
19
20
35
32
m
I
D(on)
OnState Drain Current V
GS
= 10 V, V
DS
= 5 V –25 A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 8.8 A 24 S
Dynamic Characteristics
C
iss
Input Capacitance 1604 pF
C
oss
Output Capacitance 408 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
202 pF
Switching Characteristics (Note 2)
t
d(on)
TurnOn Delay Time 13 23 ns
t
r
TurnOn Rise Time 13.5 24 ns
t
d(off)
TurnOff Delay Time 42 68 ns
t
f
TurnOff Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
25 40 ns
Q
g
Total Gate Charge 17 24 nC
Q
gs
GateSource Charge 5 nC
Q
gd
GateDrain Charge
V
DS
= 15 V, I
D
= 8.8 A,
V
GS
= 5 V
6 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current 2.1 A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.73 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6685
FDS6685 Rev D(W)
Typical Characteristics
0
10
20
30
40
50
0 1 2 3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
= -10V
-3.0V
-3.5V
-4.0V
-4.5V
V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0 10 20 30 40 50
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
=-4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
-4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -8.8A
V
GS
= -10V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
2 4 6 8 10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -4.4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
1.5 2 2.5 3 3.5 4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
=0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6685

FDS6685

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 30V 8.8A 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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