4N32, 4N33
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 30-Nov-17
2
Document Number: 81865
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP)
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
(1)
Indicates JEDEC
®
registered values
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
input
Reverse voltage V
R
3V
Forward current I
F
60 mA
Power dissipation P
diss
100 mW
Derate linearly From 55 °C 1.33 mW/°C
output
Collector emitter breakdown voltage BV
CEO
30 V
Emitter base breakdown voltage BV
EBO
8V
Collector base breakdown voltage BV
CBO
50 V
Emitter collector breakdown voltage BV
ECO
5V
Collector (load) current I
C
100 mA
Power dissipation P
diss
150 mW
Derate linearly 2mW/°C
coupler
Total dissipation P
tot
250 mW
Derate linearly 3.3 mW/°C
Isolation test voltage (between emitter 1 s V
ISO
5300 V
RMS
Leakage path 7mm min.
Air path 7mm min.
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
-55 to +150 °C
Operating temperature T
amb
-55 to +100 °C
Lead soldering time
(1)
At 260 °C 10 s
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
input
Forward voltage I
F
= 50 mA V
F
- 1.25 1.5 V
Reverse current V
R
= 3 V I
R
- 0.1 100 μA
Capacitance V
R
= 0 V C
O
-25 pF
output
Collector emitter breakdown voltage
(1)
I
C
= 100 μA, I
F
= 0 BV
CEO
30 - - V
Collector base breakdown voltage
(1)
I
C
= 100 μA, I
F
= 0 BV
CBO
50 - - V
Emitter base breakdown voltage
(1)
I
C
= 100 μA, I
F
= 0 BV
EBO
8--V
Emitter collector breakdown voltage
(1)
I
C
= 100 μA, I
F
= 0 BV
ECO
510- V
Collector emitter leakage current V
CE
= 10 V, I
F
= 0 I
CEO
- 1 100 nA
I
C
= 0.5 mA, V
CE
= 5 V h
FE
13 - -
coupler
Collector emitter saturation voltage V
CEsat
-1-V
Coupling capacitance - 1.5 - pF
