RSF010P03
Transistors
Rev.B 3/4
GATE-SOURCE VOLTAGE : −V
GS
(V)
0.0 0.5
0.001
1
0.1
0.01
10
1.0 1.5 2.0 2.5 3.0 3.5 4.0
DRAIN CURRENT : −I
D
(A)
Fig.4 Typical Transfer Characteristics
V
DS
= −10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
SOURCE-DRAIN VOLTAGE : −V
SD
(V)
0.0 0.5 1.0 1.5
0.01
10
1
0.1
2.0
REVERSE DRAIN CURRENT : −I
DR
(A)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
Ta=125°C
75°C
25°C
−25°C
V
GS
= 0V
Pulsed
GATE-SOURCE VOLTAGE : −V
GS
(V)
02
0
1200
1000
800
600
400
200
1600
1400
46810121416
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
I
D
= −0.5A
I
D
= −1A
zElectrical characteristics curves
DRAIN-SOURCE VOLTAGE : −V
DS
(V)
0.01
10
100
1000
0.1 1 10 100
CAPACITANCE : C (pF)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
Coss
Crss
DRAIN CURRENT : −I
D
(A)
0.01
1
100
10
1000
0.1 1 10
SWITCHING TIME : t (ns)
Fig.2 Switching Characteristics
Ta=25°C
V
DD= −15V
V
GS= −10V
R
G=10Ω
Pulsed
tf
tr
td(off)
td(on)
TOTAL GATE CHARGE : Qg (nC)
0
1
0
2
4
5
6
7
3
8
0.5 1 1.5 2 2.5
GATE-SOURCE VOLTAGE : −V
GS
(V)
Fig.3 Dynamic Input Characteristics
Ta=25°C
V
DD
= −15V
I
D
= −1A
R
G
=10Ω
Pulsed
DRAIN CURRENT : −I
D
(A)
01
100
10000
1000
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current ( Ι )
Ta=125°C
75°C
25°C
−25°C
V
GS
= −10V
Pulsed
DRAIN CURRENT : −I
D
(A)
01
100
10000
1000
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current ( ΙΙ )
Ta=125°C
75°C
25°C
−25°C
V
GS
= −4.5V
Pulsed
DRAIN CURRENT : −I
D
(A)
01
100
10000
1000
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current ( ΙΙΙ )
Ta=125°C
75°C
25°C
−25°C
V
GS
= −4V
Pulsed
