Nexperia
BC807L; BC807LW
45 V, 500 mA PNP general-purpose transistors
BC807L_BC807LW All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 1 — 5 January 2018
4 / 16
Symbol Parameter Conditions Min Max Unit
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
6 Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
thermal resistance from junction
to ambient
SOT23
[1]
- - 500 K/WR
th(j-a)
thermal resistance from junction
to ambient
SOT323
in free air
[1]
- - 625 K/W
[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
7 Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base
breakdown voltage
I
C
= -100 µA; I
E
= 0 A -50 - - V
V
(BR)CEO
collector-emitter
breakdown voltage
I
C
= -10 mA; I
B
= 0 A -45 - - V
V
(BR)EBO
emitter-base
breakdown voltage
I
E
= -100 µA; I
C
= 0 A -7 - - V
V
CB
= -40 V; I
E
= 0 A - - -100 nAI
CBO
collector-base
cut-off current
V
CB
= -40 V; I
E
= 0 A; T
j
= 150 °C - - -5 μA
I
EBO
emitter-base
cut-off current
V
EB
= -5 V; I
C
= 0 A - - -100 nA
DC current gain
BC807-16L,
BC807-16LW
[1]
100 - 250
BC807-25L,
BC807-25LW
[1]
160 - 400
BC807-40L,
BC807-40LW
V
CE
= -1 V; I
C
= -100 mA
[1]
250 - 600
h
FE
DC current gain V
CE
= -1 V; I
C
= -500 mA
[1]
40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= -500 mA; I
B
= -50 mA
[1]
- - -700 mV
V
BE
base-emitter voltage V
CE
= -1 V; I
C
= -500 mA
[1]
- - -1.2 V
