ZXMS6006DGTA

ZXMS6006DG
Document number: DS35142 Rev. 1 - 2
4 of 9
www.diodes.com
December 2010
© Diodes Incorporated
ZXMS6006DG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Recommended Operating Conditions
The ZXMS6006DG is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic Symbol Min Max Unit
Input Voltage Range
V
IN
0 5.5 V
Ambient Temperature Range
T
A
-40 125 °C
High Level Input Voltage for MOSFET to be on
V
IH
3 5.5 V
Low level input voltage for MOSFET to be off
V
IL
0 0.7 V
Peripheral Supply Voltage (voltage to which load is referred)
V
P
0 16 V
Thermal Characteristics
110
10m
100m
1
10
Limit of s/c protection
15X15X1.6 mm
Single 1oz FR4
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
15X15X1.6 mm
Single 1oz FR4
T
amb
=25°C
50X50X1.6 mm
Single 2oz FR4
15X15X1.6 mm
Single 1oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
15X15X1.6 mm
Single 1oz FR4
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMS6006DG
Document number: DS35142 Rev. 1 - 2
5 of 9
www.diodes.com
December 2010
© Diodes Incorporated
ZXMS6006DG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Static Characteristics
Drain-Source Clamp Voltage
V
DS
(
AZ
)
60 65 70 V
I
D
= 10mA
Off State Drain Current
I
DSS
- - 1
µA
V
DS
= 12V, V
IN
= 0V
- - 2
V
DS
= 36V, V
IN
= 0V
Input Threshold Voltage
V
IN
(
th
)
0.7 1 1.5 V
V
DS
= V
GS
, I
D
= 1mA
Input Current
I
IN
- 60 100
μA
V
IN
= +3V
- 120 200
V
IN
= +5V
Input Current While Over Temperature Active - - - 400
μA
V
IN
= +5V
Static Drain-Source On-State Resistance
R
DS(on)
- 85 125
mΩ
V
IN
= +3V, I
D
= 1A
- 75 100
V
IN
= +5V, I
D
= 1A
Continuous Drain Current (Note 4)
I
D
2.0 - -
A
V
IN
= 3V; T
A
= 25°C
2.2 - -
V
IN
= 5V; T
A
= 25°C
Continuous Drain Current (Note 5)
2.6 - -
V
IN
= 3V; T
A
= 25°C
2.8 - -
V
IN
= 5V; T
A
= 25°C
Current Limit (Note 7)
I
D(LIM)
4 8 -
A
V
IN
= +3V
6 13 -
V
IN
= +5V
Dynamic Characteristics
Turn On Delay Time
t
d
(
on
)
- 8.6 -
μs
V
DD
= 12V, I
D
= 1A, V
GS
= 5V
Rise Time
t
- 18 -
Turn Off Delay Time
t
d
(
off
)
- 34 -
Fall Time
f
f
- 15 -
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 8)
T
JT
150 175 -
°C
-
Thermal Hysteresis (Note 8)
f
f
- 10 -
°C
-
Notes: 7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods..
ZXMS6006DG
Document number: DS35142 Rev. 1 - 2
6 of 9
www.diodes.com
December 2010
© Diodes Incorporated
ZXMS6006DG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Typical Characteristics
0123456789101112
0
2
4
6
8
10
12
14
16
-50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.00
0.05
0.10
0.15
0.20
-50 -25 0 25 50 75 100 125 150
0.00
0.05
0.10
0.15
0.20
012345
0
20
40
60
80
100
120
0.40.60.81.0
0.01
0.1
1
10
3V
2.5V
2V
5V
4.5V
4V
3.5V
3V
Typical Output Characteristic
T
A
= 25°C
V
IN
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
Threshold Voltage vs Temperature
V
IN
= V
DS
I
D
= 1mA
V
TH
Threshold Voltage (V)
T
J
Junction Temperature (°C)
T
J
= 150°C
On-Resistance vs Input Voltage
T
J
= 25°C
R
DS(on)
On-Resistance (Ω)
V
IN
Input Voltage (V)
I
D
= 1A
Reverse Diode Characteristic
V
IN
= 3V
V
IN
= 5V
On-Resistance vs Temperature
T
J
Junction Temperature (°C)
R
DS(on)
On-Resistance (Ω)
Input Current vs Input Voltage
I
IN
Input Current (μA)
V
IN
Input Voltage (V)
V
SD
Source-Drain Voltage (V)
I
S
Source Curent (A)
T
J
=25°C
T
J
=150°C

ZXMS6006DGTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V N-CH INTELLIFET 60V VDS Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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