EE-SH3-B

108 EE-SH3 Series Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SH3 Series
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aper-
ture, and model with a horizontal sensing aperture are available.
Solder terminal models:
EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS
PCB terminal models:
EE-SH3-B/-SH3-C/-SH3-D/-SH3-G
Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.2
3 < mm 6
±0.24
6 < mm 10
±0.29
10 < mm 18
±0.35
18 < mm 30
±0.42
Four, 0.25
Two, C1.5
Four, R1
Matted
Center mark
Solder terminal
Cross section AA
PCB terminal
Cross section AA
19±0.15
25.4
3.4±0.2
2.54±0.2
7.2±0.2
7.2±0.2
7.6±0.3
6.2
10.2
Model Aperture (a x b)
EE-SH3(-B) 2.1 x 0.5
EE-SH3-C(S) 2.1 x 1.0
EE-SH3-D(S) 2.1 x 0.2
EE-SH3-G(S) 0.5 x 2.1
Unless otherwise specified, the
tolerances are as shown below.
Two, 3.2±0.2
dia. holes
Item Symbol Rated value
Emitter Forward current I
F
50 mA
(see note 1)
Pulse forward cur-
rent
I
FP
1 A
(see note 2)
Reverse voltage V
R
4 V
Detector Collector–Emitter
voltage
V
CEO
30 V
Emitter–Collector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector dissipa-
tion
P
C
100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S)
Emitter Forward voltage V
F
1.2 V typ., 1.5 V max. I
F
= 30 mA
Reverse current I
R
0.01 μA typ., 10 μA max. V
R
= 4 V
Peak emission wave-
length
λ
P
940 nm typ. I
F
= 20 mA
Detector Light current I
L
0.5 to 14 mA typ. 1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA I
F
= 20 mA,
V
CE
= 10 V
Dark current I
D
2 nA typ., 200 nA max. V
CE
= 10 V,
0 lx
Leakage current I
LEAK
--- ---
Collector–Emitter satu-
rated voltage
V
CE
(sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ.,
0.4 V max.
I
F
= 20 mA,
I
L
= 0.1 mA
Peak spectral sensitivity
wavelength
λ
P
850 nm typ. V
CE
= 10 V
Rising time tr 4 μs typ. V
CC
= 5 V,
R
L
= 100 Ω,
I
L
= 5 mA
Falling time tf 4 μs typ.
Be sure to read Precautions on page 25.
EE-SH3 Series Photomicrosensor (Transmissive) 109
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. CollectorEmitter
Voltage Characteristics (EE-SH3(-B))
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(EE-SH3-D(S))
Distance d (mm)
Sensing Position Characteristics
(EE-SH3(-B))
Distance d (mm)
Sensing Position Characteristics
(EE-SH3-G(S))
Distance d (mm)
Sensing Position Characteristics
(EE-SH3-C(S))
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Center of optical axis
Center of optical axis
Center of optical axis
Center of optical axis
d
0
+
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation P
C
(mW)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Forward current I
F
(mA)
Forward current I
F
(mA)
Light current I
L
(mA)
CollectorEmitter voltage V
CE
(V)
Light current I
L
(mA)
Ambient temperature Ta (°C)
Load resistance R
L
(kΩ)
Ta = 30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
Ta = 25°C
V
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
V
CC
= 5 V
Ta = 25°C
Response time tr, tf (μs)
Relative light current I
L
(%)
Dark current I
D
(nA)
I
F
= 50 mA
Ambient temperature Ta (°C)
IF
PC
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current I
L
(%)
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
Relative light current I
L
(%)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)

EE-SH3-B

Mfr. #:
Manufacturer:
Description:
Optical Sensors Optical Switches, Transmissive, Phototransistor Output PHOTO MICROSENSOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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