IXXH50N60C3 Datasheet IXXH50N60C3 | P1-P3

XPT

TM

600V

GenX3

TM

IXXH50N60C3

V

CES

= 600V

I

C110

= 50A

V

CE(sat)

≤ ≤

≤

2.30V

t

fi(typ)

= 42ns

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 600 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 100 A

I

C110

T

C

= 110°C 50 A

I

CM

T

C

= 25°C, 1ms 200 A

I

A

T

C

= 25°C 25 A

E

AS

T

C

= 25°C 200 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 5Ω I

CM

= 100 A

(RBSOA) Clamped Inductive Load @V

CE

≤ V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 10 μs

(SCSOA) R

G

= 22Ω, Non Repetitive

P

C

T

C

= 25°C 600 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in.

Weight 6g

DS100265A(02/13)

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 AD

G

C

E

Tab

Extreme Light Punch Through

IGBT for 20-60 kHz Switching

Features

z

Optimized for 20-60kHz Switching

z

Square RBSOA

z

Avalanche Capability

z

Short Circuit Capability

z

International Standard Package

Advantages

z

High Power Density

z

175°C Rated

z

Extremely Rugged

z

Low Gate Drive Requirement

z

Easy to Parallel

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 600 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.5 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 μA

T

J

= 150°C 2 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 36A, V

GE

= 15V, Note 1 1.95 2.30 V

T

J

= 150°C 2.45 V

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH50N60C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 36A, V

CE

= 10V, Note 1 11 18 S

C

ie

s

2320 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 138 pF

C

res

42 pF

Q

g

64 nC

Q

ge

I

C

= 36A, V

GE

= 15V, V

CE

= 0.5 • V

CES

18 nC

Q

gc

25 nC

t

d(on)

24 ns

t

ri

40 ns

E

on

0.72 mJ

t

d(off)

62 100 ns

t

fi

42 ns

E

of

f

0.33 0.55 mJ

t

d(on)

25 ns

t

ri

44 ns

E

on

1.46 mJ

t

d(off)

80 ns

t

fi

90 ns

E

off

0.48 mJ

R

thJC

0.25 °C/W

R

thCS

0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 36A, V

GE

= 15V

V

CE

= 360V, R

G

= 5Ω

Note 2

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

e

∅ P

TO-247 (IXXH) Outline

1 2 3

Terminals: 1 - Gate 2 - Collector

3 - Emitted

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Inductive load, T

J

= 150°C

I

C

= 36A, V

GE

= 15V

V

CE

= 360V, R

G

= 5Ω

Note 2

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXXH50N60C3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

45

50

55

00.511.522.53

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

14

V

13

V

10V

8V

6V

12V

9V

11V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

7V

9V

11V

13V

12V

14V

10V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

5

10

15

20

25

30

35

40

45

50

55

00.511.522.533.54

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

14

V

13

V

10V

12V

9V

6V

11V

8V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 36A

I

C

= 18A

I

C

= 54A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 54

A

T

J

= 25ºC

36

A

18

A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

80

90

100

45678910111213

V

GE

- Volts

I

C

-

Amperes

T

J

= 150ºC

25ºC

- 40ºC

IXXH50N60C3

IXXH50N60C3

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