IXTK170P10P Datasheet IXTK170P10P, IXTX170P10P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150C -100 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M -100 V

V

GSS

Continuous 20 V

V

GSM

Transient 30 V

I

D25

T

C

= 25C (Chip Capability) -170 A

I

LRMS

Lead Current Limit, RMS -160 A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

- 510 A

I

A

T

C

= 25C -170 A

E

AS

T

C

= 25C 3.5 J

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150C 10 V/ns

P

D

T

C

= 25C 890 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Force (PLUS247) 20..120 / 4.5..27 N/lb.

Mounting Forque (TO-264) 1.13 / 10 Nm/lb.in.

Weight PLUS247 6 g

TO-264 10 g

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= - 250A -100 V

V

GS(th)

V

DS

= V

GS

, I

D

= -1mA - 2.0 - 4.0 V

I

GSS

V

GS

= 20V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V - 50 A

T

J

= 125C - 250A

R

DS(on)

V

GS

= -10V, I

D

= 0.5 • I

D25

, Note 1 14 m

PolarP

TM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

V

DSS

= -100V

I

D25

= -170A

R

DS(on)



 14m





Features



International Standard Packages



Rugged PolarP

TM

Process



High Current Handling Capability



Fast Intrinsic Diode



Avalanche Rated



Low Package Inductance

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



High-Side Switches



Push Pull Amplifiers



DC Choppers



Automatic Test Equipment



Current Regulators

DS99974C(5/17)

IXTK170P10P

IXTX170P10P

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXTX)

Tab

G

D

S

TO-264 (IXTK)

S

G

D

Tab

IXTK170P10P

IXTX170P10P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= -10V, I

D

= 0.5 • I

D25

, Note 1 35 58 S

C

iss

12.6 nF

C

oss

V

GS

= 0V, V

DS

= - 25V, f = 1MHz 4190 pF

C

rss

930 pF

t

d(on)

32 ns

t

r

75 ns

t

d(off)

82 ns

t

f

45 ns

Q

g(on)

240 nC

Q

gs

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

45 nC

Q

gd

120 nC

R

thJC

0.14C/W

R

thCS

0.15 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V -170 A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 680 A

V

SD

I

F

= - 85A, V

GS

= 0V, Note 1 - 3.3 V

t

rr

176 ns

Q

RM

1.25 C

I

RM

-14.2 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t  300s, duty cycle, d  2%.

Resistive Switching Times

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1 (External)

I

F

= - 85A, -di/dt = -100A/s

V

R

= - 50V, V

GS

= 0V

Terminals: 1 - Gate

2 - Drain

3 - Source

PLUS 247

TM

Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Terminals: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA Outline

IXTK170P10P

IXTX170P10P

Fig. 1. Output Characteristics @ T

J

= 25

o

C

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

-2.4-2.0-1.6-1.2-0.8-0.40.0

V

DS

- Volts

I

D

- Amperes

V

GS

= -15V

-10V

- 9V

- 5V

- 6V

- 8V

- 7V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

-300

-270

-240

-210

-180

-150

-120

-90

-60

-30

0

-11-10-9-8-7-6-5-4-3-2-10

V

DS

- Volts

I

D

- Amperes

V

GS

= -15V

-10V

- 8V

- 6V

- 7V

- 9V

- 5V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0

V

DS

- Volts

I

D

- Amperes

V

GS

= -15V

-10V

- 9V

- 6V

- 5V

- 7V

- 8V

Fig. 4. R

DS(on)

Normalized to I

D

= - 85A Value vs.

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= -170A

I

D

= - 85A

Fig. 5. R

DS(on)

Normalized to I

D

= - 85A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-280-240-200-160-120-80-400

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

-15V

T

J

= 25

o

C

T

J

= 125

o

C

Fig. 6. Maximum Drain Current vs.

Case Temperature

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXTK170P10P

IXTK170P10P

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